TN2501N8-G

TN2501N8-G
Mfr. #:
TN2501N8-G
Produttore:
Microchip Technology
Descrizione:
MOSFET 18V 2.5Ohm
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TN2501N8-G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TN2501N8-G maggiori informazioni TN2501N8-G Product Details
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-89-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
18 V
Id - Corrente di scarico continua:
400 mA
Rds On - Resistenza Drain-Source:
2.5 Ohms
Vgs - Tensione Gate-Source:
15 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.6 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
1.6 mm
Lunghezza:
4.6 mm
Prodotto:
MOSFET piccolo segnale
Tipo di transistor:
1 N-Channel
Tipo:
FET
Larghezza:
2.6 mm
Marca:
Tecnologia a microchip
Tempo di caduta:
15 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
2000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
15 ns
Tempo di ritardo di accensione tipico:
5 ns
Unità di peso:
0.001862 oz
Tags
TN2501, TN250, TN25, TN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Trans MOSFET N-CH 18V 0.4A 4-Pin (3+Tab) SOT-89
***ure Electronics
TN2501 Series 18 V 400 mA N-Channel Enhancement-Mode Vertical DMOS FET -SOT-89-3
***(Formerly Allied Electronics)
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 Ohm3 SOT-89 T/R | Microchip Technology Inc. TN2501N8-G
*** Stop Electro
Power Field-Effect Transistor, 0.4A I(D), 18V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA
***ical
Trans MOSFET N-CH 250V 0.24A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
N-Channel 250 V 8.5 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-89
***(Formerly Allied Electronics)
250V N-Channel Enhancement MOSFET SOT-89 | Diodes Inc ZVN4525ZTA
***emi
Single N-Channel Power MOSFET 250V, 0.6A, 6.5Ω
***ure Electronics
N-Channel 250 V 0.6 A 6.5 Ohm Surface Mount MOSFET - SOT-89
***nell
MOSFET, N-CH, 250V, 0.6A, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 600mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.3V; Po
***ure Electronics
ZXMN10A07Z Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET - SOT-89
***ark
Mosfet, N-Ch, 100V, 1.4A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZXMN10A07ZTA
***des Inc SCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE, 100 V, RoHS
***ical
Trans MOSFET P-CH 250V 0.205A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
P-Channel 250 V 14 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-89
***ark
Mosfet, P-Ch, 250V, 0.205A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZVP4525ZTA
*** Electronic Components
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
***ure Electronics
AFT05MSx Series 30 V 520 MHz N-Channel RF Power LDMOS Transistor - SOT-89-3
***W
RF Power Transistor, 0.136 to 0.941 GHz, 4 W, Typ.Gain in dB is 20.9 @ 520 MHz, 7.5 V, LDMOS, SOT-89A
***et Japan
Transistor RF FET N-CH 30V 136MHz to 941MHz 3-Pin SOT-89 T/R
***ark
Rf Ldmos, N-Ch, 30V, Sot-89; Drain Source Voltage Vds:30V; Continuous Drain Current Id:-; Power Dissipation Pd:28W; Operating Frequency Min:136Mhz; Operating Frequency Max:941Mhz; Rf Transistor Case:Sot-89; No. Of Pins:3Pins; Msl:- Rohs Compliant: Yes |Nxp AFT05MS004NT1
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 12 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 28
***emi
Single PCP N-Channel Power MOSFET, 60V, 4.5A, 117mΩ
***ure Electronics
N-Channel 60 V 117 mOhm Surface Mount Power Mosfet - SOT-89
***ical
Trans MOSFET N-CH 60V 4.5A 4-Pin(3+Tab) SOT-89 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.5A; On Resistance Rds(On):0.092Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V Rohs Compliant: Yes
***r Electronics
Small Signal Field-Effect Transistor, 4.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA
***el Electronic
Fixed Inductors 4.7μH Shielded ±20% 0806 (2016 Metric) Tape & Reel (TR) 240mOhm Max CIGW Surface Mount FIXED IND 4.7UH 1.4A 240MOHM SMD
Parte # Mfg. Descrizione Azione Prezzo
TN2501N8-G
DISTI # V72:2272_06515651
Microchip Technology IncTrans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89
RoHS: Compliant
2118
  • 1000:$0.8289
  • 500:$0.8376
  • 250:$0.8464
  • 100:$0.8551
  • 25:$0.9538
  • 10:$1.1309
  • 1:$1.2779
TN2501N8-G
DISTI # V36:1790_06515651
Microchip Technology IncTrans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89
RoHS: Compliant
0
  • 200000:$0.5888
  • 2000:$0.7509
TN2501N8-G
DISTI # TN2501N8-G-ND
Microchip Technology IncMOSFET N-CH 18V 400MA SOT89-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$0.8858
TN2501N8-G
DISTI # 25749246
Microchip Technology IncTrans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89
RoHS: Compliant
2118
  • 1000:$0.8911
  • 500:$0.9004
  • 250:$0.9099
  • 100:$0.9192
  • 25:$1.0253
  • 11:$1.2157
TN2501N8-G
DISTI # 27693731
Microchip Technology IncTrans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89
RoHS: Compliant
1964
  • 100:$1.0028
  • 57:$1.0556
TN2501N8-G
DISTI # TN2501N8-G
Microchip Technology IncTrans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R - Tape and Reel (Alt: TN2501N8-G)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$0.5449
  • 12000:$0.5539
  • 8000:$0.5709
  • 4000:$0.5899
  • 2000:$0.6099
TN2501N8-G
DISTI # TN2501N8-G
Microchip Technology IncTrans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R (Alt: TN2501N8-G)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Asia - 0
  • 100000:$0.5119
  • 50000:$0.5244
  • 20000:$0.5375
  • 10000:$0.5513
  • 6000:$0.5658
  • 4000:$0.5890
  • 2000:$0.6143
TN2501N8-G
DISTI # TN2501N8-G
Microchip Technology IncTrans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R (Alt: TN2501N8-G)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 0
  • 20000:€0.5269
  • 12000:€0.5479
  • 8000:€0.5549
  • 4000:€0.5639
  • 2000:€0.5699
TN2501N8-G
DISTI # 53Y4248
Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 OHM 3 SOT-89 T/R0
  • 1:$0.8860
  • 2000:$0.8860
TN2501N8-G
DISTI # 70453861
Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,18V,2.5 Ohm3 SOT-89T/R
RoHS: Compliant
0
  • 2000:$0.8370
TN2501N8-G
DISTI # 689-TN2501N8-G
Microchip Technology IncMOSFET 18V 2.5Ohm
RoHS: Compliant
5112
  • 1:$1.1700
  • 10:$1.1500
  • 25:$0.9780
  • 100:$0.8850
  • 250:$0.7790
  • 500:$0.6640
  • 1000:$0.6050
  • 2000:$0.6050
  • 4000:$0.5520
  • 10000:$0.5370
TN2501N8
DISTI # 689-TN2501N8
Microchip Technology IncMOSFET 18V 2.5Ohm
RoHS: Not compliant
0
    TN2501N8-G
    DISTI # TN2501N8-G
    Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE18V2.5 Ohm
    RoHS: Compliant
    Min Qty: 1
    Package Multiple: 1
    Container: Reel
    8480
    • 1000:$0.7200
    • 100:$0.8600
    • 26:$0.9500
    • 1:$1.1400
    TN2501N8-GMicrochip Technology IncTrans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 T/R
    RoHS: Compliant
    2023 In Stock
    • 1:$1.0600
    • 25:$1.0000
    • 100:$0.9500
    • 250:$0.9100
    TN2501N8-G
    DISTI # TN2501N8G
    Microchip Technology Inc 2023
    • 1:$1.0600
    • 25:$1.0000
    • 100:$0.9500
    • 250:$0.9100
    • 500:$0.8600
    • 1000:$0.6500
    • 1500:$0.6000
    • 2000:$0.5900
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    EEPROM SERIAL EEPROM 64K 2-WIRE 1.7V
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    08-50-0114

    Mfr.#: 08-50-0114

    OMO.#: OMO-08-50-0114

    Headers & Wire Housings CRIMP TERM 22-30 TIN
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1988
    Inserisci la quantità:
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    est. Prezzo
    1
    1,17 USD
    1,17 USD
    10
    1,15 USD
    11,50 USD
    25
    0,98 USD
    24,45 USD
    100
    0,88 USD
    88,50 USD
    250
    0,78 USD
    194,75 USD
    500
    0,66 USD
    332,00 USD
    1000
    0,60 USD
    605,00 USD
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