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FDB050AN06A0

FDB050AN06A0
Mfr. #:
FDB050AN06A0
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 60V N-Ch PowerTrench MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDB050AN06A0 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDB050AN06A0 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
80 A
Rds On - Resistenza Drain-Source:
4.3 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
245 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
PowerTrench
Confezione:
Bobina
Altezza:
4.83 mm
Lunghezza:
10.67 mm
Serie:
FDB050AN06A0
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET di potenza
Larghezza:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
29 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
160 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
28 ns
Tempo di ritardo di accensione tipico:
16 ns
Parte # Alias:
FDB050AN06A0_NL
Unità di peso:
0.046296 oz
Tags
FDB05, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK ON Semiconductor FDB050AN06A0
***ure Electronics
N-Channel 60 V 5 mohm Surface Mount PowerTrench® Mosfet - D2PAK-3
***p One Stop Global
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R
***Semiconductor
N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ
***eco
IC,FDB050AN06A0,TO-263AB, N-CH ANNEL POWERTRENCH MOSFET 60V,
***et
TO-263AB, N-CHANNEL POWERTRENCH MOSFET 60V, 80A, 5MOHMS
***ser
MOSFETs 60V N-Ch PowerTrench MOSFET
***inecomponents.com
60V,80A,5 OHMS,NCH,POWER,TRENCH, MOSFET
***ark
Fet 60V 5.0 Mohm D2Pak Rohs Compliant: Yes
***i-Key
MOSFET N-CH 60V 80A TO-263AB
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:245W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CANALE N, 80A, 60V, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0043ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:245W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDB050AN06A0
DISTI # V72:2272_06300766		ON SemiconductorTrans MOSFET N-CH 60V 18A Automotive 3-Pin(2+Tab) D2PAK T/R593
  • 500:$1.7511
  • 250:$1.9819
  • 100:$2.0815
  • 25:$2.3828
  • 10:$2.3855
  • 1:$2.7683
FDB050AN06A0
DISTI # FDB050AN06A0CT-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-263AB
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2034In Stock
  • 100:$2.6532
  • 10:$3.2210
  • 1:$3.6000
FDB050AN06A0
DISTI # FDB050AN06A0DKR-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-263AB
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2034In Stock
  • 100:$2.6532
  • 10:$3.2210
  • 1:$3.6000
FDB050AN06A0
DISTI # FDB050AN06A0TR-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		1600In Stock
  • 800:$1.9027
FDB050AN06A0
DISTI # 30991089		ON SemiconductorTrans MOSFET N-CH 60V 18A Automotive 3-Pin(2+Tab) D2PAK T/R593
  • 500:$1.7511
  • 250:$1.9819
  • 100:$2.0815
  • 25:$2.3828
  • 10:$2.3855
  • 6:$2.7683
FDB050AN06A0
DISTI # FDB050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB050AN06A0)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.1900
  • 8000:$1.1900
FDB050AN06A0
DISTI # FDB050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB050AN06A0)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.5900
  • 1600:€1.3900
  • 3200:€1.1900
  • 4800:€1.1900
  • 8000:€1.0900
FDB050AN06A0
DISTI # FDB050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB050AN06A0)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$1.4352
  • 1600:$1.3800
  • 2400:$1.3289
  • 4000:$1.2814
  • 8000:$1.2372
  • 20000:$1.1960
  • 40000:$1.1764
FDB050AN06A0
DISTI # 84H4556		ON SemiconductorTO-263AB, N-CHANNEL POWERTRENCH MOSFET 60V, 80A, 5MOHMS ROHS COMPLIANT: YES0
  • 1:$1.6700
  • 800:$1.6400
  • 1600:$1.6200
  • 3200:$1.5900
  • 4800:$1.5400
FDB050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		423
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FDB050AN06A0
DISTI # 512-FDB050AN06A0		ON SemiconductorMOSFET 60V N-Ch PowerTrench MOSFET
RoHS: Compliant		1592
  • 1:$2.9500
  • 10:$2.5100
  • 100:$2.1700
  • 250:$2.0600
  • 500:$1.8500
  • 800:$1.5600
  • 2400:$1.4800
  • 4800:$1.4300
FDB050AN06A0
DISTI # 8090809P		ON SemiconductorMOSFETFAIRCHILDFDB050AN06A0, RL1044
  • 10:£1.0450
FDB050AN06A0Freescale Semiconductor 556
  • 514:$1.1250
  • 239:$1.1700
  • 1:$3.6000
FDB050AN06A0Fairchild Semiconductor Corporation 695
  • 2:$2.7000
  • 9:$2.0250
  • 26:$1.6875
  • 90:$1.0125
  • 298:$0.9450
FDB050AN06A0
DISTI # C1S541901472944		ON SemiconductorTrans MOSFET N-CH 60V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		671
  • 800:$1.6750
FDB050AN06A0
DISTI # C1S226600574859		ON SemiconductorTrans MOSFET N-CH 60V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		593
  • 250:$1.9819
  • 100:$2.0815
  • 25:$2.3828
  • 10:$2.3855
  • 1:$2.7683
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 Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di FDB050AN06A0 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,95 USD
2,95 USD
10
2,51 USD
25,10 USD
100
2,17 USD
217,00 USD
250
2,06 USD
515,00 USD
500
1,85 USD
925,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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