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FQB4N80TM

FQB4N80TM
Mfr. #:
FQB4N80TM
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 800V 3.9A D2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQB4N80TM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
FSC
categoria di prodotto
FET - Single
Confezione
Bobina
Unità di peso
0.046296 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
3.13 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
35 ns
Ora di alzarsi
45 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
3.9 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Resistenza
3.6 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
35 ns
Tempo di ritardo all'accensione tipico
16 ns
Transconduttanza diretta-Min
3.8 S
Modalità canale
Aumento
Tags
FQB4N, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
***ure Electronics
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descrizione Azione Prezzo
FQB4N80TM
DISTI # V72:2272_06301137		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 10:$1.3043
  • 1:$1.5051
FQB4N80TM
DISTI # FQB4N80TMCT-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMDKR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMTR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$0.9084
FQB4N80TM
DISTI # 30703250		ON SemiconductorN-CH/800V/3.9A/3.6OHM3200
  • 9600:$0.6421
  • 2400:$0.6673
  • 800:$0.7530
FQB4N80TM
DISTI # 29055410		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 12:$1.3043
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.5649
  • 1600:$0.5609
  • 3200:$0.5539
  • 4800:$0.5469
  • 8000:$0.5339
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.8359
  • 1600:€0.6839
  • 3200:€0.6269
  • 4800:€0.5779
  • 8000:€0.5369
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$0.6872
  • 1600:$0.6608
  • 2400:$0.6363
  • 4000:$0.6136
  • 8000:$0.5925
  • 20000:$0.5727
  • 40000:$0.5633
FQB4N80TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2400
  • 1000:$1.0300
  • 500:$1.0800
  • 100:$1.1300
  • 25:$1.1800
  • 1:$1.2700
FQB4N80TM
DISTI # 512-FQB4N80TM		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		1036
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0700
  • 500:$0.9460
  • 800:$0.7470
  • 2400:$0.6620
  • 9600:$0.6370
FQB4N80TM
DISTI # 6710908P		ON SemiconductorMOSFET N-CHANNEL 800V 3.9A D2PAK, RL854
  • 5:£0.5000
FQB4N80TMFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 800
    FQB4N80TM
    DISTI # C1S541901511368    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		3200
    • 2400:$0.6880
    • 1600:$0.8310
    • 800:$0.8990
    FQB4N80TM
    DISTI # C1S541901596147    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		520
    • 250:$0.9806
    • 100:$1.0187
    • 25:$1.3024
    • 10:$1.3043
    FQB4N80TM
    DISTI # 2453890RL    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    FQB4N80TM
    DISTI # 2453890    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    Immagine Parte # Descrizione
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    Mfr.#: FQB46N15TM

    OMO.#: OMO-FQB46N15TM-1190

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    OMO.#: OMO-FQB4N90TM-ON-SEMICONDUCTOR

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    FQB4N90TM-NL

    Mfr.#: FQB4N90TM-NL

    OMO.#: OMO-FQB4N90TM-NL-1190

    		 Nuovo e originale
    FQB4P40TM-NL

    Mfr.#: FQB4P40TM-NL

    OMO.#: OMO-FQB4P40TM-NL-1190

    		 Nuovo e originale
    FQB44N10TM

    Mfr.#: FQB44N10TM

    OMO.#: OMO-FQB44N10TM-ON-SEMICONDUCTOR

    		 MOSFET N-CH 100V 43.5A D2PAK
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di FQB4N80TM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,79 USD
    0,79 USD
    10
    0,75 USD
    7,49 USD
    100
    0,71 USD
    70,93 USD
    500
    0,67 USD
    334,95 USD
    1000
    0,63 USD
    630,50 USD
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