S29GL01GS10FHI010

S29GL01GS10FHI010
Mfr. #:
S29GL01GS10FHI010
Produttore:
Cypress Semiconductor
Descrizione:
NOR Flash Nor
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S29GL01GS10FHI010 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
S29GL01GS10FHI010 maggiori informazioni S29GL01GS10FHI010 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore di cipresso
Categoria di prodotto:
NOR Flash
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
FBGA-64
Serie:
S29GL01G/512/256/128S
Dimensione della memoria:
1 Gbit
Tipo di interfaccia:
Parallelo
Organizzazione:
128 M x 8
Tipo di temporizzazione:
asincrono
Larghezza bus dati:
8 bit
Tensione di alimentazione - Min:
2.7 V
Tensione di alimentazione - Max:
3.6 V
Corrente di alimentazione - Max:
100 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Confezione:
Vassoio
Tipo di memoria:
Velocità:
100 ns
Architettura:
MirrorBit Eclipse
Marca:
Semiconduttore di cipresso
Sensibile all'umidità:
Tipologia di prodotto:
NOR Flash
Standard:
Interfaccia flash comune (CFI)
Quantità confezione di fabbrica:
180
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
MirrorBit Eclipse
Tags
S29GL01GS10FHI, S29GL01GS10FH, S29GL01GS10F, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin Fortified BGA Tray
***ark
TRAY PKGED / 1G BIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ark
TAPE AND REEL / 256 MBIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
***ical
NOR Flash Parallel 3V/3.3V 256M-bit 16M x 16 100ns 64-Pin FBGA T/R
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***et
NOR Flash Parallel 3V/3.3V 256Mbit 16M x 16bit 100ns 64-Pin FBGA Tray
***ment14 APAC
MEMORY, FLASH, 256MB, 3V, 64BGA; Memory Size:256Mbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); IC Generic Number:S29GL256S
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***et
NOR Flash Parallel 3V/3.3V 128Mbit 8M x 16bit 100ns 64-Pin FBGA Tray
***nell
MEMORY, FLASH, 128MB, 3V, 64BGA; Memory Size:128Mbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (18-Jun-2012); IC Generic Number:S29GL128S
***p One Stop Global
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns Automotive 64-Pin FBGA T/R
***ron SCT
NOR Flash, Legacy NOR Flash, 128Mb, 2.7V-3.6V, 64-ball FBGA, RoHS
***i-Key
PARALLEL NOR SLC 8MX16 LBGA
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descrizione Azione Prezzo
S29GL01GS10FHI010
DISTI # C1S725700079445
Cypress SemiconductorUnclassified1390
  • 200:$9.0800
  • 100:$9.7900
  • 50:$12.7000
  • 10:$13.9000
  • 5:$16.9000
  • 1:$18.9000
S29GL01GS10FHI010
DISTI # 428-4066-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
1749In Stock
  • 1080:$8.0845
  • 540:$8.3633
  • 360:$8.4500
  • 180:$8.8898
  • 50:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS10FHI010
DISTI # 727-S29GL01GS10FHI01
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
180
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
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Disponibilità
Azione:
335
Su ordine:
2318
Inserisci la quantità:
Il prezzo attuale di S29GL01GS10FHI010 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
12,98 USD
12,98 USD
10
11,80 USD
118,00 USD
25
10,92 USD
273,00 USD
50
10,03 USD
501,50 USD
250
9,14 USD
2 285,00 USD
500
8,55 USD
4 275,00 USD
1000
7,85 USD
7 850,00 USD
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