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IXFH18N100Q3

IXFH18N100Q3
Mfr. #:
IXFH18N100Q3
Produttore:
Littelfuse
Descrizione:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH18N100Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH18N100Q3 DatasheetIXFH18N100Q3 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFH18N100Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1 kV
Id - Corrente di scarico continua:
18 A
Rds On - Resistenza Drain-Source:
660 mOhms
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
90 nC
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
830 W
Configurazione:
Separare
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFH18N100
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Transconduttanza diretta - Min:
16 S
Tempo di caduta:
13 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
33 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
40 ns
Tempo di ritardo di accensione tipico:
37 ns
Unità di peso:
0.056438 oz
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 1KV 18A 3-Pin(3+Tab) TO-247
***trelec
MOSFET, Single - N-Channel, 1kV, 18A, 830W, TO-247
***ark
Mosfet, N-Ch, 1Kv, 18A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:18A; On Resistance Rds(On):0.66Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFH18N100Q3
DISTI # IXFH18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$13.1867
IXFH18N100Q3
DISTI # 747-IXFH18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$16.3900
  • 10:$14.9000
  • 25:$13.7800
  • 50:$12.6800
  • 100:$12.3700
  • 250:$11.3400
  • 500:$10.2900
IXFH18N100Q3
DISTI # 2470016		IXYS CorporationMOSFET, N CHANNEL, 1KV, 18A, TO-247
RoHS: Compliant		0
  • 1:£12.7200
  • 5:£12.4000
  • 10:£10.4200
  • 50:£9.5900
  • 100:£9.3500
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IXFH18N100Q3

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Disponibilità
Azione:
52
Su ordine:
2035
Inserisci la quantità:
Il prezzo attuale di IXFH18N100Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
16,39 USD
16,39 USD
10
14,90 USD
149,00 USD
25
13,78 USD
344,50 USD
50
12,68 USD
634,00 USD
100
12,37 USD
1 237,00 USD
250
11,34 USD
2 835,00 USD
500
10,29 USD
5 145,00 USD
1000
9,40 USD
9 400,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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