OMO ElectronicOMO Electronic
Expand menu
0 Carrello

SI4562DY-T1-E3

SI4562DY-T1-E3
Mfr. #:
SI4562DY-T1-E3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4562DY-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4562DY-T1-E3 DatasheetSI4562DY-T1-E3 Datasheet (P4-P6)SI4562DY-T1-E3 Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Serie:
SI4
Larghezza:
3.9 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Parte # Alias:
SI4562DY-E3
Unità di peso:
0.006596 oz
Tags
SI4562D, SI4562, SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N/P-CH 20V 7.1A/6.2A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.6V; Package/Case:8-SOIC; Termination Type:SMD ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A; DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:7.1A; Continuous Drain Current Id, P Channel:-6.2A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:7.1A; Resistance, Rds On:0.035ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont P Channel:6.2A; Current, Idm Pulse:40A; N-channel Gate Charge:25nC; No. of Pins:8; P Channel Gate Charge:22nC; Power, Pd:2W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V N Channel:0.035ohm; Resistance, Rds on @ Vgs = 2.5V P Channel:0.050ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.025ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.033ohm; Resistance, Rds on P Channel Max:0.05ohm; SMD Marking:SI4562DY; Transistors, No. of:2; Voltage, Vds Max:20V; Voltage, Vds P Channel Max:20V; Width, Tape:12mm
Parte # Mfg. Descrizione Azione Prezzo
SI4562DY-T1-E3
DISTI # SI4562DY-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4562DY-T1-E3
    DISTI # SI4562DY-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI4562DY-T1-E3
      DISTI # SI4562DY-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI4562DY-T1-E3
        DISTI # 71T8049        		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes0
          SI4562DY-T1-E3
          DISTI # 06J7807          		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:8Pins RoHS Compliant: Yes0
            SI4562DY-T1-E3
            DISTI # 781-SI4562DY-T1-E3            		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
            RoHS: Compliant            		0
              SI4562DY-T1
              DISTI # 781-SI4562DY-TR              		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
              RoHS: Not compliant              		0
                Immagine Parte # Descrizione
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3-VISHAY

                		 IGBT Transistors MOSFET 20V 7.1/6.2A 2W
                SI4562DY

                Mfr.#: SI4562DY

                OMO.#: OMO-SI4562DY-1190

                		 MOSFET 20V 7.1/6.2A 2W
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3-VISHAY

                		 MOSFET N/P-CH 20V 8-SOIC
                Disponibilità
                Azione:
                Available
                Su ordine:
                3000
                Inserisci la quantità:
                Il prezzo attuale di SI4562DY-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
                Iniziare con
                Prodotti più recenti
                • SiA468DJ-T1-GE3 TrenchFET® Power MOSFET
                  SiA468DJ-T1-GE3 TrenchFET® Power MOSFET
                  The Vishay Siliconix SiA468DJ provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.
                • ThunderFETs
                  ThunderFETs
                  Vishay's ThunderFETs have excellent efficiency in high density power supplies and are also compatible with all common MOSFET control circuits.
                • Compare SI4562DY-T1-E3
                  Compare SI4562DY-T1-E3
                  SI4562DY vs SI4562DYT1E3 vs SI4562DYT1GE3
                • SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE
                  SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE
                  Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
                • SIC46 microBUCK Series
                  SIC46 microBUCK Series
                  Vishay Siliconix's SiC46 high efficiency synchronous buck regulators with integrated high-side and low-side power MOSFETs.
                • DGQ2788A AEC-Q100 Qualified Analog Switch
                  DGQ2788A AEC-Q100 Qualified Analog Switch
                  The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
                More Newest Products
                Top