AS4C32M16SC-7TINTR

AS4C32M16SC-7TINTR
Mfr. #:
AS4C32M16SC-7TINTR
Produttore:
Alliance Memory
Descrizione:
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C32M16SC-7TINTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
AS4C32M16SC-7TINTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM
Larghezza bus dati:
16 bit
Organizzazione:
32 M x 16
Pacchetto/custodia:
TSOP-54
Dimensione della memoria:
512 Mbit
Frequenza massima di clock:
143 MHz
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
3 V
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
AS4C32M16SC
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
1000
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C32M16S, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
Immagine Parte # Descrizione
AS4C32M16D3-12BCNTR

Mfr.#: AS4C32M16D3-12BCNTR

OMO.#: OMO-AS4C32M16D3-12BCNTR

DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
AS4C32M16D3-12BCN

Mfr.#: AS4C32M16D3-12BCN

OMO.#: OMO-AS4C32M16D3-12BCN

DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
AS4C32M16D1A-5TIN

Mfr.#: AS4C32M16D1A-5TIN

OMO.#: OMO-AS4C32M16D1A-5TIN

DRAM
AS4C32M16D2B-25BIN

Mfr.#: AS4C32M16D2B-25BIN

OMO.#: OMO-AS4C32M16D2B-25BIN

DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2
AS4C32M16D1-5TINTR

Mfr.#: AS4C32M16D1-5TINTR

OMO.#: OMO-AS4C32M16D1-5TINTR

DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
AS4C32M16D2-25BIN

Mfr.#: AS4C32M16D2-25BIN

OMO.#: OMO-AS4C32M16D2-25BIN

DRAM 512M, 1.8V, 32M x 16 DDR2
AS4C32M16SA-7BCN

Mfr.#: AS4C32M16SA-7BCN

OMO.#: OMO-AS4C32M16SA-7BCN-ALLIANCE-MEMORY

DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
AS4C32M16S-7TIN

Mfr.#: AS4C32M16S-7TIN

OMO.#: OMO-AS4C32M16S-7TIN-ALLIANCE-MEMORY

DRAM 512Mb, 3.3V, 143Mhz 32M x 16 SDRAM
AS4C32M16D2-25BCNTR

Mfr.#: AS4C32M16D2-25BCNTR

OMO.#: OMO-AS4C32M16D2-25BCNTR-ALLIANCE-MEMORY

DRAM 512M, 1.8V, 32M x 16 DDR2
AS4C32M16D3L-12BINTR

Mfr.#: AS4C32M16D3L-12BINTR

OMO.#: OMO-AS4C32M16D3L-12BINTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 96FBGA
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di AS4C32M16SC-7TINTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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