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BSZ076N06NS3 G

BSZ076N06NS3 G
Mfr. #:
BSZ076N06NS3 G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ076N06NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
BSZ076N06NS3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
BSZ076N06NS3GATMA1 BSZ076N06NS3GXT SP000454420
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
69 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5 ns
Ora di alzarsi
40 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
20 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
7.6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
20 ns
Tempo di ritardo all'accensione tipico
15 ns
Qg-Gate-Carica
37 nC
Transconduttanza diretta-Min
39 S 20 S
Modalità canale
Aumento
Tags
BSZ076, BSZ07, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
BSZ076N06NS3GATMA1
DISTI # V72:2272_06384428		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.5041
  • 1000:$0.5094
  • 500:$0.6512
  • 250:$0.7441
  • 100:$0.7518
  • 25:$0.9817
  • 10:$1.0907
  • 1:$1.2841
BSZ076N06NS3GATMA1
DISTI # V36:1790_06384428		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
    BSZ076N06NS3GATMA1
    DISTI # BSZ076N06NS3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Limited Supply - Call
    • 5000:$0.5242
    BSZ076N06NS3GATMA1
    DISTI # BSZ076N06NS3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSZ076N06NS3GATMA1
      DISTI # 33139496      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
      RoHS: Compliant      		5000
      • 3000:$0.5041
      • 1000:$0.5094
      • 500:$0.6512
      • 250:$0.7441
      • 100:$0.7518
      • 25:$0.9817
      • 14:$0.9916
      BSZ076N06NS3GXT
      DISTI # BSZ076N06NS3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
      RoHS: Compliant
      Min Qty: 5000
      Container: Reel      		Americas - 0
      • 50000:$0.4549
      • 30000:$0.4629
      • 20000:$0.4789
      • 10000:$0.4969
      • 5000:$0.5159
      BSZ076N06NS3GATMA1
      DISTI # BSZ076N06NS3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Bulk (Alt: BSZ076N06NS3GATMA1)
      Min Qty: 782
      Container: Bulk      		Americas - 0
      • 7820:$0.4059
      • 3910:$0.4129
      • 2346:$0.4279
      • 1564:$0.4439
      • 782:$0.4609
      BSZ076N06NS3GATMA1
      DISTI # SP000454420      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R (Alt: SP000454420)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 50000:€0.4169
      • 30000:€0.4489
      • 20000:€0.4869
      • 10000:€0.5309
      • 5000:€0.6489
      BSZ076N06NS3GATMA1
      DISTI # 47W3362      		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes8603
      • 1000:$0.5430
      • 500:$0.6880
      • 100:$0.7790
      • 10:$1.0100
      • 1:$1.1800
      BSZ076N06NS3 G
      DISTI # 726-BSZ076N06NS3G      		Infineon Technologies AGMOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
      RoHS: Compliant      		0
        BSZ076N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
        RoHS: Compliant        		16557
        • 1000:$0.4300
        • 500:$0.4600
        • 100:$0.4800
        • 25:$0.5000
        • 1:$0.5300
        BSZ076N06NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Not Compliant        		2600
        • 1000:$0.4200
        • 500:$0.4400
        • 100:$0.4600
        • 25:$0.4800
        • 1:$0.5200
        BSZ076N06NS3GInfineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 14A, 60V, 0.0076OHM, N-CHANNEL, SI, POWER, MOSFET3244
        • 2134:$0.3300
        • 477:$0.3750
        • 1:$1.2000
        BSZ076N06NS3GATMA1Infineon Technologies AG 2809
          BSZ076N06NS3GInfineon Technologies AG 5877
            BSZ076N06NS3GATMA1
            DISTI # 2212829            		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
            RoHS: Compliant            		8603
            • 100:$1.1900
            • 10:$1.5500
            • 1:$1.8000
            BSZ076N06NS3GATMA1
            DISTI # 2212829            		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON8618
            • 500:£0.5910
            • 250:£0.6300
            • 100:£0.6680
            • 25:£0.8670
            • 5:£1.0700
            BSZ076N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		Europe - 5000
              Immagine Parte # Descrizione
              BSZ076N06NS3 G

              Mfr.#: BSZ076N06NS3 G

              OMO.#: OMO-BSZ076N06NS3-G

              		 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
              BSZ076N06NS3GATMA1

              Mfr.#: BSZ076N06NS3GATMA1

              OMO.#: OMO-BSZ076N06NS3GATMA1

              		 MOSFET MV POWER MOS
              BSZ076N06NS3GXT

              Mfr.#: BSZ076N06NS3GXT

              OMO.#: OMO-BSZ076N06NS3GXT-1190

              		 Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
              BSZ076N06NS3G

              Mfr.#: BSZ076N06NS3G

              OMO.#: OMO-BSZ076N06NS3G-1190

              		 Nuovo e originale
              BSZ076N06NS3GATMA1

              Mfr.#: BSZ076N06NS3GATMA1

              OMO.#: OMO-BSZ076N06NS3GATMA1-INFINEON-TECHNOLOGIES

              		 MOSFET N-CH 60V 20A TSDSON-8
              BSZ076N06NS3 G

              Mfr.#: BSZ076N06NS3 G

              OMO.#: OMO-BSZ076N06NS3-G-128

              		 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
              Disponibilità
              Azione:
              Available
              Su ordine:
              5000
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