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Parte # | Mfg. | Descrizione | Azione | Prezzo |
---|---|---|---|---|
IPS105N03LGAKMA1 DISTI # IPS105N03LGAKMA1-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
IPS105N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 18615 |
|
IPS105N03LGAKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 27000 |
|
IPS105N03L G DISTI # 726-IPS105N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 RoHS: Compliant | 0 |
Immagine | Parte # | Descrizione |
---|---|---|
Mfr.#: IPS1051L OMO.#: OMO-IPS1051L-1190 |
IC, MOSFET, IPS, SOT-223 | |
Mfr.#: IPS1051LPBF OMO.#: OMO-IPS1051LPBF-1190 |
MOSFET, Power, N-Ch, RDS(ON) 160 Milliohms, ID 1.4A, SOT-223, PD 2W, 3us td(on), -40deg | |
Mfr.#: IPS1051LTRPBF OMO.#: OMO-IPS1051LTRPBF-1190 |
INTELLIGENT POWER SWITCH SINGLE/DUAL CHANNEL LOW SIDE DRIVER IN A SOT-223 PACKAG | |
Mfr.#: IPS1052G OMO.#: OMO-IPS1052G-1190 |
Nuovo e originale | |
Mfr.#: IPS1052GPBF OMO.#: OMO-IPS1052GPBF-1190 |
MOSFET, Power, N-Ch, RDS(ON) 160 Milliohms, SO-8, PD 1.25W, 3us td(on), 15us td(off) | |
Mfr.#: IPS1052GTR OMO.#: OMO-IPS1052GTR-1190 |
Nuovo e originale | |
Mfr.#: IPS105N03L OMO.#: OMO-IPS105N03L-1190 |
Nuovo e originale | |
Mfr.#: IPS105N03LG OMO.#: OMO-IPS105N03LG-1190 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | |
Mfr.#: IPS105N03LGS OMO.#: OMO-IPS105N03LGS-1190 |
Nuovo e originale | |
Mfr.#: IPS105N03L G OMO.#: OMO-IPS105N03L-G-126 |
IGBT Transistors MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 |