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IRFSL7540PBF

IRFSL7540PBF
Mfr. #:
IRFSL7540PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 60V Single N-Channel HEXFET Power
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFSL7540PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRFSL7540PBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-262-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
110 A
Rds On - Resistenza Drain-Source:
5.1 mOhms
Vgs th - Tensione di soglia gate-source:
3.7 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
130 nC
Pd - Dissipazione di potenza:
160 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
StrongIRFET
Confezione:
Tubo
Altezza:
9.45 mm
Lunghezza:
10.2 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4.5 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
110 S
Tempo di caduta:
56 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
76 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
58 ns
Tempo di ritardo di accensione tipico:
12 ns
Parte # Alias:
SP001557648
Unità di peso:
0.073511 oz
Tags
IRFSL75, IRFSL7, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube
***ark
TUBE / MOSFET,60V 120A, 5.34mOhm 86nC, TO-262
***S
French Electronic Distributor since 1988
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-262 - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 60V, 160A, 4.2 MOHM, 85 NC QG, TO-262
*** Electronic Components
MOSFET MOSFT 60V 160A 4.2mOhm 85nC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***(Formerly Allied Electronics)
IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et Europe
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262
***(Formerly Allied Electronics)
MOSFET; 75V; 100A; 7.8 MOHM; 160 NC QG; TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descrizione Azione Prezzo
IRFSL7540PBF
DISTI # 31229000		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		195
  • 1000:$0.9542
  • 500:$1.1520
  • 100:$1.3152
  • 15:$1.6512
IRFSL7540PBF
DISTI # IRFSL7540PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO262
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.0926
IRFSL7540PBF
DISTI # C1S322000587535		Infineon Technologies AGMOSFETs200
  • 100:$1.3100
  • 25:$1.5900
  • 5:$1.9700
IRFSL7540PBF
DISTI # IRFSL7540PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube (Alt: IRFSL7540PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0699
  • 2000:$1.0669
  • 4000:$1.0649
  • 6000:$1.0619
  • 10000:$1.0589
IRFSL7540PBF
DISTI # SP001557648		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube (Alt: SP001557648)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1729
  • 10:€1.0419
  • 25:€0.9379
  • 50:€0.8529
  • 100:€0.7819
  • 500:€0.7209
  • 1000:€0.6699
IRFSL7540PBF
DISTI # 942-IRFSL7540PBF		Infineon Technologies AGMOSFET 60V Single N-Channel HEXFET Power
RoHS: Compliant		1000
  • 1:$2.0200
  • 10:$1.7200
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9940
IRFSL7540PBF
DISTI # 9075132P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 60V 110A TO262, TU800
  • 100:£0.9900
  • 500:£0.8690
  • 1000:£0.7190
  • 2500:£0.6690
Immagine Parte # Descrizione
IRFSL7540PBF

Mfr.#: IRFSL7540PBF

OMO.#: OMO-IRFSL7540PBF

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OMO.#: OMO-IRFSL7534PBF-INFINEON-TECHNOLOGIES

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IRFSL7537PBF

Mfr.#: IRFSL7537PBF

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 MOSFET N-CH 60V 173A TO262
IRFSL7734PBF

Mfr.#: IRFSL7734PBF

OMO.#: OMO-IRFSL7734PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 183A TO262
IRFSL7787PBF

Mfr.#: IRFSL7787PBF

OMO.#: OMO-IRFSL7787PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 76A TO262
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di IRFSL7540PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,01 USD
2,01 USD
10
1,71 USD
17,10 USD
100
1,37 USD
137,00 USD
500
1,19 USD
595,00 USD
1000
0,99 USD
994,00 USD
2000
0,92 USD
1 850,00 USD
5000
0,89 USD
4 455,00 USD
10000
0,86 USD
8 570,00 USD
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