SPI07N60S5

Mfr. #:: SPI07N60S5
Produttore:: Rochester Electronics, LLC
Descrizione:: - Bulk (Alt: SPI07N60S5)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPI07N60S5 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: SPI07N60, SPI07N, SPI07, SPI0, SPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPI07N60S5 Descrizione

***i-Key: MOSFET N-CH 600V 7.3A TO-262

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***ical: Trans MOSFET N-CH 560V 7.6A Automotive 3-Pin(3+Tab) TO-262 Tube

***ment14 APAC: MOSFET, N, 500V, I2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Threshold Voltage Vgs Typ:3V; Transistor Case Style:I2-PAK; Package / Case:I2-PAK; Power Dissipation Pd:83W; Pulse Current Idm:22.8A; Termination Type:Through Hole; Transistor Type:Enhancement; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***et: Transistor MOSFET N-Channel 600V 7.3A 3-Pin TO-262 Tube

***nell: MOSFET, N, 600V, I2-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:7.3A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I2-PAK; Termination Type:Through Hole; Current, Idm Pulse:21.9A; Power, Pd:83W; Voltage, Vds:600V; Voltage, Vds Max:600V

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

*** Electronics: Trans MOSFET N-CH 250V 8.8A 3-Pin(3+Tab) I2PAK Rail

***ser: MOSFETs 250V N-Channel Adv Q-FET C-Series

***el Electronic: IC SUPERVISOR 1 CHANNEL 3SSOP

***icroelectronics: N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package

***ical: Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) I2PAKFP Tube

***r Electronics: Power Field-Effect Transistor

***el Electronic: CAP CER 1UF 4V X5R 0204

***ark: Ptd High Voltage

***icroelectronics: N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package

***r Electronics: Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ment14 APAC: MOSFET, N CH, 60V, 8.4A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPI07N60S5HKSA1 DISTI # SPI07N60S5HKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
SPI07N60S5 DISTI # SPI07N60S5	Infineon Technologies AG	- Bulk (Alt: SPI07N60S5) RoHS: Not Compliant Min Qty: 432 Container: Bulk	Americas - 0	4320:$0.7359 2160:$0.7499 1296:$0.7759 864:$0.8049 432:$0.8349
SPI07N60S5IN DISTI # SPI07N60S5IN	Infineon Technologies AG	- Bulk (Alt: SPI07N60S5IN) Min Qty: 25000 Container: Bulk	Americas - 0	250000:$0.0127 125000:$0.0129 75000:$0.0134 50000:$0.0139 25000:$0.0144
SPI07N60S5 DISTI # 726-SPI07N60S5	Infineon Technologies AG	MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS S5 RoHS: Compliant	0
SPI07N60S5	Infineon Technologies AG	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	80	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400
SPI07N60S5IN	Infineon Technologies AG	RoHS: Not Compliant	373	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SPI07N65C3XKSA1 OMO.#: OMO-SPI07N65C3XKSA1-126	IGBT Transistors MOSFET N-Ch 650V 7.3A I2PAK-3
	Mfr.#: SPI07N60C3XKSA1 OMO.#: OMO-SPI07N60C3XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 650V 7.3A I2PAK-3
	Mfr.#: SPI07N60C3 OMO.#: OMO-SPI07N60C3-128	MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS C3
	Mfr.#: SPI070-30-1R5 OMO.#: OMO-SPI070-30-1R5-1190	Nuovo e originale
	Mfr.#: SPI070-30-8R2 OMO.#: OMO-SPI070-30-8R2-1190	Nuovo e originale
	Mfr.#: SPI0703-1R0M OMO.#: OMO-SPI0703-1R0M-1190	Nuovo e originale
	Mfr.#: SPI07N60C3,07N60C3 OMO.#: OMO-SPI07N60C3-07N60C3-1190	Nuovo e originale
	Mfr.#: SPI07N60C3HKSA1 OMO.#: OMO-SPI07N60C3HKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 7.3A TO-262
	Mfr.#: SPI07N60C3S OMO.#: OMO-SPI07N60C3S-1190	Nuovo e originale
	Mfr.#: SPI07N60S5HKSA1 OMO.#: OMO-SPI07N60S5HKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 7.3A TO-262

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di SPI07N60S5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,00 USD~~; ~~0,00 USD~~

10: ~~0,00 USD~~; ~~0,00 USD~~

100: ~~0,00 USD~~; ~~0,00 USD~~

500: ~~0,00 USD~~; ~~0,00 USD~~

1000: ~~0,00 USD~~; ~~0,00 USD~~

Iniziare con

SPI07N60 7
SPI07N 10
SPI07 14
SPI0 66
SPI 551

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SPI07N60S5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes