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IKB20N65EH5ATMA1

IKB20N65EH5ATMA1
Mfr. #:
IKB20N65EH5ATMA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switc
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKB20N65EH5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKB20N65EH5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-263-3
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
38 A
Pd - Dissipazione di potenza:
125 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
650V TRENCHSTOP 5
Confezione:
Bobina
Corrente continua del collettore Ic Max:
38 A
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKB20N65EH5 SP001502642
Tags
IKB2, IKB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Parte # Mfg. Descrizione Azione Prezzo
IKB20N65EH5ATMA1
DISTI # IKB20N65EH5ATMA1-ND		Infineon Technologies AGINDUSTRY 14
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.6617
IKB20N65EH5ATMA1
DISTI # SP001502642		Infineon Technologies AGINDUSTRY 14 (Alt: SP001502642)
RoHS: Compliant
Min Qty: 1000		Europe - 1000
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.7900
  • 1000:€2.2900
IKB20N65EH5ATMA1
DISTI # IKB20N65EH5ATMA1		Infineon Technologies AGINDUSTRY 14 - Tape and Reel (Alt: IKB20N65EH5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.3900
  • 10000:$1.3900
  • 2000:$1.4900
  • 4000:$1.4900
  • 1000:$1.5900
IKB20N65EH5ATMA1
DISTI # 93AC7067		Infineon Technologies AGIGBT, 650V, 38A, 125W, TO-263,DC Collector Current:38A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-263,No. of Pins:3Pins,RoHS Compliant: Yes987
  • 500:$1.8900
  • 250:$2.1100
  • 100:$2.2200
  • 50:$2.3400
  • 25:$2.4500
  • 10:$2.5700
  • 1:$3.0200
IKB20N65EH5ATMA1
DISTI # 726-IKB20N65EH5ATMA1		Infineon Technologies AGIGBT Transistors Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
RoHS: Compliant		0
  • 1:$2.9900
  • 10:$2.5400
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
  • 1000:$1.5800
  • 2000:$1.5000
  • 5000:$1.4400
IKB20N65EH5ATMA1
DISTI # 2986349		Infineon Technologies AGIGBT, 650V, 38A, 125W, TO-263
RoHS: Compliant		953
  • 1000:$2.1400
  • 500:$2.1700
  • 250:$2.4800
  • 100:$2.6500
  • 10:$3.0500
  • 1:$3.8100
IKB20N65EH5ATMA1
DISTI # 2986349		Infineon Technologies AGIGBT, 650V, 38A, 125W, TO-263956
  • 100:£2.0200
  • 10:£2.3200
  • 1:£3.0800
Immagine Parte # Descrizione
IKB20N65EH5ATMA1

Mfr.#: IKB20N65EH5ATMA1

OMO.#: OMO-IKB20N65EH5ATMA1

 IGBT Transistors Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switc
IKB20N65EH5ATMA1

Mfr.#: IKB20N65EH5ATMA1

OMO.#: OMO-IKB20N65EH5ATMA1-INFINEON-TECHNOLOGIES

 INDUSTRY 14
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di IKB20N65EH5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,99 USD
2,99 USD
10
2,54 USD
25,40 USD
100
2,20 USD
220,00 USD
250
2,09 USD
522,50 USD
500
1,87 USD
935,00 USD
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