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SI8902AEDB-T2-E1

SI8902AEDB-T2-E1
Mfr. #:
SI8902AEDB-T2-E1
Produttore:
Vishay
Descrizione:
N-CHANNEL 24-V (D-S) MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI8902AEDB-T2-E1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI8902AEDB-T2-E1 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SI8902, SI890, SI89, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Common drain N-chan MFOOT 2.4X 1.6 24V 14mohm @4.5V ESD
***ical
Trans MOSFET N-CH 6-Pin Micro Foot
***ure Electronics
24V 5.9A 0.028 Ohm N-ch MICRO FOOT® 2.4 x 1.6
***i-Key
N-CHANNEL 24-V (D-S) MOSFET
***et
COMMON DRAIN N-CHAN MFOOT 2.4X 1.6 24V 14MOHM
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descrizione Azione Prezzo
SI8902AEDB-T2-E1
DISTI # SI8902AEDB-T2-E1-ND		Vishay SiliconixN-CHANNEL 24-V (D-S) MOSFET
RoHS: Not compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.3005
SI8902AEDB-T2-E1
DISTI # SI8902AEDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 24V 11A 6-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8902AEDB-T2-E1)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2709
  • 30000:$0.2789
  • 18000:$0.2869
  • 12000:$0.2989
  • 6000:$0.3079
SI8902AEDB-T2-E1
DISTI # 78-SI8902AEDB-T2-E1		Vishay IntertechnologiesMOSFET 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6
RoHS: Compliant		6000
  • 1:$0.8400
  • 10:$0.6760
  • 100:$0.5130
  • 500:$0.4240
  • 1000:$0.3390
  • 3000:$0.3070
  • 6000:$0.2860
  • 9000:$0.2750
  • 24000:$0.2650
Immagine Parte # Descrizione
SI8902AEDB-T2-E1

Mfr.#: SI8902AEDB-T2-E1

OMO.#: OMO-SI8902AEDB-T2-E1

 MOSFET 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6
SI8902AEDB-T2-E1

Mfr.#: SI8902AEDB-T2-E1

OMO.#: OMO-SI8902AEDB-T2-E1-VISHAY

 N-CHANNEL 24-V (D-S) MOSFET
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di SI8902AEDB-T2-E1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,40 USD
0,40 USD
10
0,38 USD
3,78 USD
100
0,36 USD
35,78 USD
500
0,34 USD
168,95 USD
1000
0,32 USD
318,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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