W947D6HBHX6E

Mfr. #:: W947D6HBHX6E
Produttore:: Winbond
Descrizione:: DRAM 128M mDDR, x16, 166MHz, 65nm
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: W947D6HBHX6E Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Winbond

Categoria di prodotto:: DRAM

RoHS:: Y

Tipo:: SDRAM Mobile - LPDDR

Larghezza bus dati:: 16 bit

Organizzazione:: 8 M x 16

Pacchetto/custodia:: BGA-60

Dimensione della memoria:: 128 Mbit

Frequenza massima di clock:: 166 MHz

Tensione di alimentazione - Max:: 1.95 V

Tensione di alimentazione - Min:: 1.7 V

Corrente di alimentazione - Max:: 38 mA

Temperatura di esercizio minima:: - 25 C

Temperatura massima di esercizio:: + 85 C

Serie:: W947D6HB

Confezione:: Vassoio

Marca:: Winbond

Stile di montaggio:: SMD/SMT

Sensibile all'umidità:: sì

Tipologia di prodotto:: DRAM

Quantità confezione di fabbrica:: 312

sottocategoria:: Memoria e archiviazione dati

Tags: W947D6HBHX6, W947D6, W947, W94

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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W947D6HBHX6E Descrizione

***ical: DRAM Chip Mobile LPDDR SDRAM 128Mbit 8Mx16 1.8V 60-Pin VFBGA

***-Wing Technology: EAR99 Surface Mount Tray 8MX16 ic memory 166MHz 5ns 9mm 50mA

*** Americas: LPDDR SDRAM, 128M, 1.8V, 16bit, 166MHz, -25^80 degree

***or: IC DRAM 128MBIT PARALLEL 60VFBGA

*** International: IC SDRAM 128MBIT 166MHZ 60TFBGA

***HDesign: 128Mb Low Power DDR SDRAM 166MHz

***et: DRAM Chip SDRAM 128M-Bit 8M x 16 3.3V 54-Pin TFBGA

***-Wing Technology: EAR99 Surface Mount Tray 8MX16 ic memory 166MHz 5.4ns 8mm 120mA

***I SCT: DDR SDRAM, 8Mx16, 3.3V, 4K, BGA-54,RoHS

***or: IC DRAM 128MBIT PARALLEL 54TFBGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***el Electronic: DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V

***nell: SDRAM, 128MBIT, 166MHZ, BGA-54; DRAM Memory Configuration: 8M x 16bit; Memory Case Style: BGA; No. of Pins: 54Pins; IC Interface Type: Parallel; Access Time: 5.4ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)

*** Source Electronics: IC DRAM 64M PARALLEL 54TFBGA / 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

***et: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TFBGA

***ark: 64M, 3.3V, Sdram, 4Mx16, 166 Mhz, 54 Ball Bga (8Mmx8Mm) Rohs, It

***-Wing Technology: EAR99 Surface Mount Tray 4MX16 ic memory 166MHz 5.4ns 8mm 100mA

***icontronic: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54

***I SCT: DDR SDRAM, 4Mx16, 3.3V, 4K, BGA-54,RoHS

***i-Key: IC DRAM 64MBIT PARALLEL 54TFBGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: 64M, 3.3v, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8Mm x 8mm) RoHS, T&R

***-Wing Technology: Surface Mount Tape & Reel (TR) 4MX16 SDRAM ic memory 166MHz 5.4ns 0.8mm 100mA

***ical: DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R

***I SCT: DDR SDRAM, 4Mx16, 3.3V, 4K, BGA-54,RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: IC DRAM 64MBIT PARALLEL 54TFBGA

***et: DRAM Chip DDR2 SDRAM 512M-Bit 64M x 8 1.8V 60-Pin FBGA

***-Wing Technology: Active Copper Silver Tin 3-STATE 2014 ic memory 0C~85C TC 1.7V 512Mb 0.01A

***ron SCT: DRAM, DDR2 SDRAM, 512Mb, x8, 60-ball FBGA, RoHS

*** Americas: U87B DDR2 SDRAM 64MX8 PLASTIC GREEN FBGA 1.8V

*** Stop Electro: DDR2 DRAM, 64MX8, 0.4ns, CMOS, PBGA60

***i-Key: IC DRAM 512MBIT PARALLEL 60FBGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***el Electronic: IC, OCTAL D-TYPE LATCH, 74HCT573

***ark: Dram, 64M X 8Bit, 0 To 85Deg C; Dram Type:ddr2; Dram Density:512Mbit; Dram Memory Configuration:64M X 8Bit; Clock Frequency:400Mhz; Memory Case Style:tfbga; No. Of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:2.5Ns Rohs Compliant: Yes

***p One Stop Global: DRAM Chip DDR2 SDRAM 1G-Bit 128Mx8 1.8V 60-Pin FBGA

***-Wing Technology: EAR99 Surface Mount MT47H128M8 Tray ic memory 400MHz 400ps 10mm 1Gb

***ron SCT: DRAM, DDR2 SDRAM, 1Gb, x8, 60-ball FBGA, RoHS

***icontronic: DDR2 DRAM, 128MX8, 0.4ns, CMOS, PBGA60

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: DRAM, 128M X 8BIT, 0 TO 85DEG C; DRAM Type:DDR2; Memory Configuration:128M x 8bit; Clock Frequency Max:400MHz; IC Case / Package:TFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; IC Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

***et: DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin F-BGA

***-Wing Technology: Surface Mount Tray 128MX8 SDRAM - DDR3L ic memory 933MHz 20ns 10.5mm 0.162mA

***ron SCT: DRAM, DDR3 SDRAM, 1Gb, x8, 1.35V, 78-ball FBGA, RoHS

***icontronic: DDR3L DRAM, 128MX8, 0.195ns, CMOS, PBGA78

***enic: FBGA-78(8x10.5) DDR SDRAM ROHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: DRAM, 128M X 8BIT, 0 TO 95DEG C;

***ark: DRAM, 128M X 8BIT, 0 TO 95DEG C; DRAM Type:DDR3; Memory Configuration:128M x 8bit; Clock Frequency Max:933MHz; IC Case / Package:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; IC Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
W947D6HBHX6E DISTI # W947D6HBHX6E-ND	Winbond Electronics Corp	IC DRAM 128M PARALLEL 60VFBGA RoHS: Compliant Min Qty: 312 Container: Tray	Temporarily Out of Stock	312:$2.2733
W947D6HBHX6E TR DISTI # W947D6HBHX6ETR-ND	Winbond Electronics Corp	IC DRAM 128M PARALLEL 60VFBGA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$2.1211
W947D6HBHX6E DISTI # W947D6HBHX6E	Winbond Electronics Corp	DRAM Chip Mobile LPDDR SDRAM 128M-Bit 8Mx16 1.8V 60-Pin VFBGA (Alt: W947D6HBHX6E) RoHS: Compliant Min Qty: 2496	Asia - 0	2496:$11.0000 4992:$8.8000 7488:$7.3333 12480:$6.7692 24960:$6.2857 62400:$6.1111 124800:$5.9459

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: W947D6HBHX5E OMO.#: OMO-W947D6HBHX5E	DRAM 128M mDDR, x16, 200MHz
	Mfr.#: W947D6HBHX5I OMO.#: OMO-W947D6HBHX5I	DRAM 128M mDDR, x16, 200MHz, Industrial Temp
	Mfr.#: W947D6HBHX5E TR OMO.#: OMO-W947D6HBHX5E-TR	DRAM 128M mDDR, x16, 200MHz T&R
	Mfr.#: W947D6HBHX5I TR OMO.#: OMO-W947D6HBHX5I-TR	DRAM 128M mDDR, x16, 200MHz, Industrial Temp T&R
	Mfr.#: W947D6HBHX6E TR OMO.#: OMO-W947D6HBHX6E-TR-WINBOND-ELECTRONICS	IC DRAM 128M PARALLEL 60VFBGA
	Mfr.#: W947D6HBHX5I TR OMO.#: OMO-W947D6HBHX5I-TR-WINBOND-ELECTRONICS	IC DRAM 128M PARALLEL 60VFBGA
	Mfr.#: W947D6HBHX-5E OMO.#: OMO-W947D6HBHX-5E-1190	Nuovo e originale
	Mfr.#: W947D6HBHX5E OMO.#: OMO-W947D6HBHX5E-WINBOND-ELECTRONICS	IC DRAM 128M PARALLEL 60VFBGA
	Mfr.#: W947D6HBHX5I OMO.#: OMO-W947D6HBHX5I-WINBOND-ELECTRONICS	IC DRAM 128M PARALLEL 60VFBGA
	Mfr.#: W947D6HBHX6G OMO.#: OMO-W947D6HBHX6G-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2000
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Iniziare con

W947D6HBHX6 3
W947D6 8
W947 15
W94 213

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W947D6HBHX6E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes