SCT3105KLGC11

SCT3105KLGC11
Mfr. #:
SCT3105KLGC11
Produttore:
Rohm Semiconductor
Descrizione:
MOSFET Nch 1200V 24A SiC TO-247N
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SCT3105KLGC11 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SCT3105KLGC11 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
SiC
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247N-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1200 V
Id - Corrente di scarico continua:
24 A
Rds On - Resistenza Drain-Source:
137 mOhms
Vgs th - Tensione di soglia gate-source:
2.7 V
Vgs - Tensione Gate-Source:
4 V to 22 V
Qg - Carica cancello:
51 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Serie:
SCT3x
Tipo di transistor:
1 N-Channel
Marca:
Semiconduttore ROHM
Transconduttanza diretta - Min:
3.4 S
Tempo di caduta:
17 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
27 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
31 ns
Tempo di ritardo di accensione tipico:
17 ns
Tags
SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Parte # Mfg. Descrizione Azione Prezzo
SCT3105KLGC11
DISTI # SCT3105KLGC11-ND
ROHM SemiconductorSCT3105KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 450:$12.5240
  • 25:$14.9480
  • 10:$15.5940
  • 1:$16.9700
SCT3105KL
DISTI # SCT3105KLGC11
ROHM Semiconductor- Rail/Tube (Alt: SCT3105KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$10.2900
  • 2250:$10.5900
  • 1350:$11.1900
  • 900:$11.8900
  • 450:$12.6900
SCT3105KLGC11
DISTI # 81AC5496
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.105ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 500:$11.8300
  • 250:$12.6500
  • 100:$13.3000
  • 50:$14.2000
  • 25:$15.1000
  • 10:$15.7500
  • 1:$17.1300
SCT3105KLGC11
DISTI # 755-SCT3105KLGC11
ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
450
  • 1:$16.9600
  • 10:$15.5900
  • 25:$14.9500
  • 100:$13.1700
  • 250:$12.5200
  • 500:$11.7100
SCT3105KLGC11
DISTI # 2947070
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W
RoHS: Compliant
0
  • 10:$17.0800
  • 5:$17.5300
  • 1:$19.0500
SCT3105KLGC11ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
Americas -
    SCT3105KLGC11
    DISTI # 2947070
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W0
    • 100:£9.5500
    • 50:£10.2000
    • 10:£10.8400
    • 5:£12.2900
    • 1:£12.5500
    Immagine Parte # Descrizione
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11

    MOSFET Nch 1200V 24A SiC TO-247N
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11

    MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11-ROHM-SEMI

    SCT3105KL IS AN SIC (SILICON CAR
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    Disponibilità
    Azione:
    888
    Su ordine:
    2871
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    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    16,96 USD
    16,96 USD
    10
    15,59 USD
    155,90 USD
    25
    14,95 USD
    373,75 USD
    100
    13,17 USD
    1 317,00 USD
    250
    12,52 USD
    3 130,00 USD
    500
    11,71 USD
    5 855,00 USD
    1000
    10,74 USD
    10 740,00 USD
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