MRF7S19100NR1

MRF7S19100NR1
Mfr. #:
MRF7S19100NR1
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors 1990MHZ 29W
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRF7S19100NR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
E
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
65 V
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-270-4
Confezione:
Bobina
Configurazione:
Singolo Doppio Scarico Doppio Cancello
Altezza:
2.64 mm
Lunghezza:
17.58 mm
Serie:
MRF7S19100N
Larghezza:
9.07 mm
Marca:
NXP / Freescale
Modalità canale:
Aumento
Sensibile all'umidità:
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 0.5 V, 10 V
Unità di peso:
0.058073 oz
Tags
MRF7S1910, MRF7S191, MRF7S19, MRF7S1, MRF7S, MRF7, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V
***et Europe
Trans MOSFET N-CH 65V 5-Pin TO-270 WB EP T/R
***ical
Trans RF MOSFET N-CH 65V 5-Pin TO-270 W T/R
***i-Key
MOSFET RF N-CH 28V 29W TO270-4
***hardson RFPD
RF POWER TRANSISTOR LDMOS
Parte # Mfg. Descrizione Azione Prezzo
MRF7S19100NR1
DISTI # MRF7S19100NR1-ND
NXP SemiconductorsFET RF 65V 1.99GHZ TO270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF7S19100NR1
    DISTI # MRF7S19100NR1
    Avnet, Inc.Trans MOSFET N-CH 65V 5-Pin TO-270 WB EP T/R - Bulk (Alt: MRF7S19100NR1)
    RoHS: Compliant
    Min Qty: 8
    Container: Bulk
    Americas - 0
    • 80:$41.7900
    • 40:$42.5900
    • 24:$44.1900
    • 16:$45.9900
    • 8:$47.8900
    MRF7S19100NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
    RoHS: Compliant
    3387
    • 1000:$43.3000
    • 500:$45.5800
    • 100:$47.4600
    • 25:$49.4900
    • 1:$53.3000
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    Mfr.#: MRF7S18125BHSR5

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    Mfr.#: MRF7S19210HSR5

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    MRF7S19100NR1

    Mfr.#: MRF7S19100NR1

    OMO.#: OMO-MRF7S19100NR1-NXP-SEMICONDUCTORS

    FET RF 65V 1.99GHZ TO270-4
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di MRF7S19100NR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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