IRF7341GTRPBF

Mfr. #:: IRF7341GTRPBF
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 55V 5.1A
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRF7341GTRPBF Scheda dati
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Maggiori informazioni:: IRF7341GTRPBF maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: FET - Array

Serie: HEXFETR

Confezione: Nastro e bobina (TR)

Pacchetto-Custodia: 8-SOIC (0.154", 3.90mm Width)

Temperatura di esercizio: -55°C ~ 175°C (TJ)

Tipo di montaggio: Montaggio superficiale

Pacchetto-dispositivo-fornitore: 8-SO

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 2.4W

Drain-to-Source-Voltage-Vdss: 55V

Ingresso-Capacità-Ciss-Vds: 780pF @ 25V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 5.1A

Rds-On-Max-Id-Vgs: 50 mOhm @ 5.1A, 10V

Vgs-th-Max-Id: 1V @ 250μA (Min)

Gate-Carica-Qg-Vgs: 44nC @ 10V

Tags: IRF7341, IRF734, IRF73, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7341GTRPBF Descrizione

***et Japan: Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R

***ark: MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL

***ineon SCT: 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

IRF7341GTRPBF Maggiori informazioni

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRF7341GTRPBF DISTI # 24580469	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R RoHS: Compliant	4000	40000:$0.7564 24000:$0.7583 16000:$0.7602 8000:$0.7621 4000:$0.7641
IRF7341GTRPBF DISTI # IRF7341GTRPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 5.1A RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.9281
IRF7341GTRPBF DISTI # C1S322000647873	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.8420
IRF7341GTRPBF DISTI # IRF7341GTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 4000	4000:$0.7959 8000:$0.7939 16000:$0.7919 24000:$0.7899 40000:$0.7879
IRF7341GTRPBF DISTI # 49AC0327	Infineon Technologies AG	MOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes	3850	1:$1.8400 10:$1.5700 25:$1.4600 50:$1.3600 100:$1.2500 250:$1.1800 500:$1.1000 1000:$0.9070
IRF7341GTRPBF DISTI # 942-IRF7341GTRPBF	Infineon Technologies AG	MOSFET PLANAR_MOSFETS RoHS: Compliant	3336	1:$1.8400 10:$1.5700 100:$1.2500 500:$1.1000 1000:$0.9070 4000:$0.8130
IRF7341GTRPBF DISTI # 2839483	Infineon Technologies AG	MOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8 RoHS: Compliant	3850	5:$3.3200 25:$2.8900 100:$2.3600 250:$1.9900 500:$1.7200 1000:$1.6300 5000:$1.5400
IRF7341GTRPBF DISTI # 2839483	Infineon Technologies AG	MOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8 RoHS: Compliant	3840	1:£2.0100 10:£1.5600 100:£1.2000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IRF7341TRPBF OMO.#: OMO-IRF7341TRPBF	MOSFET MOSFT DUAL NCh 55V 4.7A
	Mfr.#: IRF7342PBF OMO.#: OMO-IRF7342PBF	MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS
	Mfr.#: IRF7341GTRPBF OMO.#: OMO-IRF7341GTRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 5.1A
	Mfr.#: IRF734PBF OMO.#: OMO-IRF734PBF-VISHAY	MOSFET N-CH 450V 4.9A TO-220AB
	Mfr.#: IRF7341TRPBF/IRF7341QTR OMO.#: OMO-IRF7341TRPBF-IRF7341QTR-1190	Nuovo e originale
	Mfr.#: IRF7342D2PBF OMO.#: OMO-IRF7342D2PBF-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 3.4A 8-SOIC
	Mfr.#: IRF7343ITRPBF OMO.#: OMO-IRF7343ITRPBF-1190	MOSFET SO-8
	Mfr.#: IRF7343Q OMO.#: OMO-IRF7343Q-1190	Nuovo e originale
	Mfr.#: IRF7343QTRPBF OMO.#: OMO-IRF7343QTRPBF-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 55V 8-SOIC
	Mfr.#: IRF7343TRPBF , 2SJ634 OMO.#: OMO-IRF7343TRPBF-2SJ634-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5000
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Il prezzo attuale di IRF7341GTRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,13 USD~~; ~~1,13 USD~~

10: ~~1,08 USD~~; ~~10,78 USD~~

100: ~~1,02 USD~~; ~~102,11 USD~~

500: ~~0,96 USD~~; ~~482,20 USD~~

1000: ~~0,91 USD~~; ~~907,70 USD~~

Iniziare con

IRF7341 11
IRF734 37
IRF73 326
IRF7 1262
IRF 8615

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IRF7341GTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes