STU80N4F6

STU80N4F6
Mfr. #:
STU80N4F6
Produttore:
STMicroelectronics
Descrizione:
MOSFET N CH 40V 80A IPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STU80N4F6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
STU80N4F6 maggiori informazioni STU80N4F6 Product Details
Attributo del prodotto
Valore attributo
Produttore
STMicroelectronics
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
STRIPFET a canale N
Confezione
Tubo
Unità di peso
0.139332 oz
Stile di montaggio
Foro passante
Nome depositato
STRIPFET
Pacchetto-Custodia
IPAK-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
70 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
11.9 ns
Ora di alzarsi
7.6 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
80 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
4 V
Rds-On-Drain-Source-Resistenza
5.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
46.1 ns
Tempo di ritardo all'accensione tipico
10.5 ns
Qg-Gate-Carica
36 nC
Modalità canale
Aumento
Tags
STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30V 76A 6MOHM - Rail/Tube
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
STU80N4F6
DISTI # 30615503
STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 33:$0.7625
STU80N4F6
DISTI # 497-13657-5-ND
STMicroelectronicsMOSFET N CH 40V 80A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
2377In Stock
  • 525:$1.0841
  • 150:$1.3195
  • 75:$1.5488
  • 10:$1.6420
  • 1:$1.8300
STU80N4F6
DISTI # C1S730200785376
STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$0.6030
  • 1:$0.6100
STU80N4F6
DISTI # 89W1526
STMicroelectronicsPTD LOW VOLTAGE0
  • 5000:$0.7670
  • 2500:$0.7910
  • 1000:$0.9800
  • 500:$1.1000
  • 100:$1.1800
  • 10:$1.4700
  • 1:$1.7300
STU80N4F6
DISTI # 511-STU80N4F6
STMicroelectronicsMOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM)
RoHS: Compliant
2887
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0400
  • 1000:$0.8560
  • 3000:$0.7970
  • 6000:$0.7680
  • 9000:$0.7380
Immagine Parte # Descrizione
STU8NM60ND

Mfr.#: STU8NM60ND

OMO.#: OMO-STU8NM60ND

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STU80N4F6

Mfr.#: STU80N4F6

OMO.#: OMO-STU80N4F6-STMICROELECTRONICS

MOSFET N CH 40V 80A IPAK
STU816S

Mfr.#: STU816S

OMO.#: OMO-STU816S-1190

Nuovo e originale
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OMO.#: OMO-STU83003-1190

Power Bipolar Transistors (Alt: STU83003)
STU8438CU

Mfr.#: STU8438CU

OMO.#: OMO-STU8438CU-1190

Nuovo e originale
STU8N65M5

Mfr.#: STU8N65M5

OMO.#: OMO-STU8N65M5-STMICROELECTRONICS

MOSFET N-CH 650V 7A IPAK
STU8N80K5

Mfr.#: STU8N80K5

OMO.#: OMO-STU8N80K5-STMICROELECTRONICS

MOSFET N CH 800V 6A IPAK
STU8NA80

Mfr.#: STU8NA80

OMO.#: OMO-STU8NA80-1190

Nuovo e originale
STU8NM50N

Mfr.#: STU8NM50N

OMO.#: OMO-STU8NM50N-STMICROELECTRONICS

MOSFET N-CH 500V 5A IPAK
STU8NM60ND

Mfr.#: STU8NM60ND

OMO.#: OMO-STU8NM60ND-STMICROELECTRONICS

MOSFET N-CH 600V 7A IPAK
Disponibilità
Azione:
Available
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3000
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