FDB088N08

Mfr. #:: FDB088N08
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET NCH 75V 8.8Mohm
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDB088N08 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 75 V

Id - Corrente di scarico continua:: 85 A

Rds On - Resistenza Drain-Source:: 7.3 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 160 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: PowerTrench

Confezione:: Bobina

Altezza:: 4.83 mm

Lunghezza:: 10.67 mm

Serie:: FDB088N08

Tipo di transistor:: 1 N-Channel

Larghezza:: 9.65 mm

Marca:: ON Semiconductor / Fairchild

Tempo di caduta:: 102 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 158 ns

Quantità confezione di fabbrica:: 800

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 244 ns

Tempo di ritardo di accensione tipico:: 45 ns

Unità di peso:: 0.046296 oz

Tags: FDB088, FDB08, FDB0, FDB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB088N08 Valutazioni e recensioni

R***d

Ordered a programmer with a clothespin for sale in dr alika with a coupon of $4, total paid 53 rubles. Came to perm for a month in one package with a doll. In appearance well, in practice did not check. The seller is good.

2019-05-29

R***z

All right. all right. All right.

2019-04-30

E**z

Normal stabilizers. Checked on the stand, all within the permissible limits, kept as expected. It was 53 days. But! Don't be surprised. You buy for 45 rubles, so everything is fine. Seller recommend.

2019-04-30

A***k

Leds working, i'm happy. Thank you.

2019-03-02

FDB088N08 Descrizione

***Yang: Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3

***emi: N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

***r Electronics: Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ark: Mosfet Transistor, N Channel, 106 A, 75 V, 7 Mohm, 10 V, 4 V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2

*** Source Electronics: MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation

***ure Electronics: Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***icroelectronics: N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET

***roFlash: Mosfet Transistor, N Channel, 70 A, 75 V, 6.5 Mohm, 10 V, 4 V

***ical: Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 75 V 0.0075 O 160 nC Surface Mount STripFETII MosFet - D2PAK

***ark: MOSFET, N CH, 75V, 120A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***nell: MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET

***ical: Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDB088N08 DISTI # FDB088N08TR-ND	ON Semiconductor	MOSFET N-CH 75V 75A D2PAK Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	5600:$0.9962 2400:$1.0111 1600:$1.0860 800:$1.3108
FDB088N08 DISTI # FDB088N08CT-ND	ON Semiconductor	MOSFET N-CH 75V 75A D2PAK Min Qty: 1 Container: Cut Tape (CT)	800In Stock	100:$1.6432 10:$2.0440 1:$2.2800
FDB088N08 DISTI # FDB088N08DKR-ND	ON Semiconductor	MOSFET N-CH 75V 75A D2PAK Min Qty: 1 Container: Digi-Reel®	800In Stock	100:$1.6432 10:$2.0440 1:$2.2800
FDB088N08_F141 DISTI # FDB088N08_F141-ND	ON Semiconductor	MOSFET N-CHANNEL 75V 120A D2PAK Container: Tape & Reel (TR)	Limited Supply - Call
FDB088N08 DISTI # FDB088N08	ON Semiconductor	Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB088N08) Min Qty: 302 Container: Bulk	Americas - 0	3020:$1.0239 1510:$1.0499 906:$1.0639 604:$1.0769 302:$1.0839
FDB088N08 DISTI # FDB088N08	ON Semiconductor	Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB088N08) Min Qty: 800 Container: Tape and Reel	Europe - 0
FDB088N08 DISTI # FDB088N08	ON Semiconductor	Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB088N08) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$0.9239 4800:$0.9479 3200:$0.9599 1600:$0.9719 800:$0.9789
FDB088N08 DISTI # 64R2992	ON Semiconductor	N-Channel PowerTrench MOSFET 75V, 85A, 8.8m / REEL RoHS: Not Compliant	0	30000:$0.9910 18000:$1.0300 12000:$1.0700 6000:$1.1800 3000:$1.2400 1:$1.3100
FDB088N08 DISTI # 512-FDB088N08	ON Semiconductor	MOSFET NCH 75V 8.8Mohm RoHS: Compliant	784	1:$2.2100 10:$1.8800 100:$1.5000 500:$1.3200 800:$1.0900 2400:$1.0200 4800:$0.9740
FDB088N08	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	19579	1000:$1.1000 500:$1.1500 100:$1.2000 25:$1.2500 1:$1.3500
FDB088N08 DISTI # 7599465	ON Semiconductor	In a Pack of 2, FDB088N08 N-Channel MOSFET, 120 A, 75 V PowerTrench, 3-Pin D2PAK ON Semiconductor, PK Min Qty: 2 Container: Package	690	2:$3.0350 20:$1.7220 100:$1.3770 400:$1.1890 800:$1.0010
FDB088N08 DISTI # 1662550	ON Semiconductor	On a Reel of 800, FDB088N08 N-Channel MOSFET, 120 A, 75 V PowerTrench, 3-Pin D2PAK ON Semiconductor, RL Min Qty: 800 Container: Reel	0	800:$1.0260
FDB088N08	ISC	D²PAK/TO-263	5000

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Disponibilità

Azione:: 809
Su ordine:: 2792
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Il prezzo attuale di FDB088N08 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,21 USD~~; ~~2,21 USD~~

10: ~~1,88 USD~~; ~~18,80 USD~~

100: ~~1,50 USD~~; ~~150,00 USD~~

500: ~~1,32 USD~~; ~~660,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

FDB088 3
FDB08 6
FDB0 73
FDB 624

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