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IDH12G65C6XKSA1

IDH12G65C6XKSA1
Mfr. #:
IDH12G65C6XKSA1
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC DIODES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDH12G65C6XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDH12G65C6XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-2
Se - Corrente diretta:
27 A
Vrrm - Tensione inversa ripetitiva:
650 V
Vf - Tensione diretta:
1.25 V
Ifsm - Corrente diretta in avanti:
64 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
1.2 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
81 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
500
sottocategoria:
Diodi e raddrizzatori
Parte # Alias:
IDH12G65C6 SP001595596
Unità di peso:
0.070548 oz
Tags
IDH12G, IDH12, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 650V 27A 2-Pin(2+Tab) TO-220 Tube
***ronik
SiC-Diode 12A 650V 1,25V TO220
***i-Key
DIODE SCHOTTKY 650V 27A TO220-2
***ark
Sic Schottky Diode, 650V, 27A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:27A; Total Capacitive Charge Qc:17.1Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 27A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:27A; Total Capacitive Charge Qc:17.1nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):27A; Forward Surge Current Ifsm Max:64A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 27A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:27A; Potenza Reattiva Capacitiva Qc:17.1nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):27A; Corrente di Picco Diretta Ifsm Max:64A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Parte # Mfg. Descrizione Azione Prezzo
IDH12G65C6XKSA1
DISTI # V99:2348_18191488		Infineon Technologies AGSIC DIODES0
    IDH12G65C6XKSA1
    DISTI # V36:1790_18191488    		Infineon Technologies AGSIC DIODES0
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6XKSA1-ND      		Infineon Technologies AGDIODE SCHOTTKY 650V 27A TO220-2
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		1500In Stock
      • 2500:$2.6932
      • 500:$3.3615
      • 100:$3.9488
      • 25:$4.5564
      • 10:$4.8200
      • 1:$5.3700
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6XKSA1      		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH12G65C6XKSA1)
      RoHS: Compliant
      Min Qty: 500
      Container: Tube      		Americas - 0
      • 5000:$2.4900
      • 3000:$2.5900
      • 2000:$2.6900
      • 1000:$2.7900
      • 500:$2.8900
      IDH12G65C6XKSA1
      DISTI # 33AC2815      		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:27A,Total Capacitive Charge Qc:17.1nC,Diode Case RoHS Compliant: Yes779
      • 500:$3.4000
      • 250:$3.7900
      • 100:$3.9900
      • 50:$4.1900
      • 25:$4.4000
      • 10:$4.6100
      • 1:$5.4100
      IDH12G65C6XKSA1
      DISTI # 726-IDH12G65C6XKSA1      		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
      RoHS: Compliant      		1501
      • 1:$5.3600
      • 10:$4.5600
      • 100:$3.9500
      • 250:$3.7500
      • 500:$3.3700
      • 1000:$2.8400
      • 2500:$2.7000
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6      		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,650V,12A,81W,PG-TO220-244
      • 50:$3.5800
      • 10:$3.9900
      • 3:$4.5100
      • 1:$5.0100
      IDH12G65C6XKSA1
      DISTI # 2779281      		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220
      RoHS: Compliant      		827
      • 1000:$4.0600
      • 500:$4.1400
      • 250:$4.3700
      • 100:$4.6200
      • 10:$5.2100
      • 1:$5.5700
      IDH12G65C6XKSA1
      DISTI # 2779281      		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220835
      • 500:£2.6500
      • 250:£2.9500
      • 100:£3.1000
      • 10:£3.5800
      • 1:£4.6800
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      Disponibilità
      Azione:
      Available
      Su ordine:
      1984
      Inserisci la quantità:
      Il prezzo attuale di IDH12G65C6XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
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      Prezzo unitario
      est. Prezzo
      1
      5,36 USD
      5,36 USD
      10
      4,56 USD
      45,60 USD
      100
      3,95 USD
      395,00 USD
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      3,75 USD
      937,50 USD
      500
      3,37 USD
      1 685,00 USD
      1000
      2,84 USD
      2 840,00 USD
      2500
      2,70 USD
      6 750,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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