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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SCTW90N65G2V DISTI # V36:1790_17702706 | STMicroelectronics | N-channel 650 V SiC MOSFET | 0 | |
| SCTW90N65G2V DISTI # 497-18351-ND | STMicroelectronics | SILICON CARBIDE POWER MOSFET 650 RoHS: Compliant Container: Tube | Temporarily Out of Stock | |
| SCTW90N65G2V DISTI # SCTW90N65G2V | STMicroelectronics | N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V) RoHS: Not Compliant Min Qty: 30 Container: Tube | Americas - 0 |
|
| SCTW90N65G2V DISTI # 02AH6930 | STMicroelectronics | PTD WBG & POWER RF | 0 |
|
| SCTW90N65G2V DISTI # 511-SCTW90N65G2V | STMicroelectronics | MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SCTW90N65G2V OMO.#: OMO-SCTW90N65G2V |
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package |
|
Mfr.#: SCTW90N65G2V |
SILICON CARBIDE POWER MOSFET 650 |
