IPD090N03LGATMA1

Mfr. #:: IPD090N03LGATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 30V 40A DPAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD090N03LGATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 40 A

Rds On - Resistenza Drain-Source:: 7.5 mOhms

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 15 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 42 W

Configurazione:: Separare

Nome depositato:: OptiMOS

Confezione:: Bobina

Altezza:: 2.3 mm

Lunghezza:: 6.5 mm

Serie:: OptiMOS 3

Tipo di transistor:: 1 N-Channel

Larghezza:: 6.22 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 53 S

Tempo di caduta:: 2.6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 3 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Parte # Alias:: G IPD090N03L IPD9N3LGXT SP000680636

Unità di peso:: 0.139332 oz

Tags: IPD090N03LG, IPD090N03L, IPD090, IPD09, IPD0, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD090N03LGATMA1 Descrizione

***o-Tech: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***et Japan: Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans MOSFET N-CH 30V 20A 3-Pin (2+Tab) DPAK Rail

***ser: MOSFETs- Power and Small Signal 30V 20A N-Channel

***r Electronics: Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:288mJ; Current Id Max:20A; Junction to Case Thermal Resistance A:1.67°C/W; Package / Case:DPAK; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***ical: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: N-Channel PowerTrench® MOSFET, 30V, 21A, 35mΩ

***ure Electronics: N-Channel 30 V 35 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***r Electronics: Power Field-Effect Transistor, 21A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 21A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 35V VDS, 20±V VGS

***ical: Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R

***ark: Mosfet, Dual, N/p-Ch, 35V, 5.3A Rohs Compliant: Yes

***el Electronic: MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K

***ure Electronics: 35V, 13A, N&P CHANNEL, D2PAK-4L

*** Services: CoC and 2-years warranty / RFQ for pricing

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD090N03LGATMA1 DISTI # V72:2272_06391054	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	161	100:$0.3316 25:$0.4601 10:$0.5623 1:$0.6737
IPD090N03LGATMA1 DISTI # V36:1790_06391054	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.1937 1250000:$0.1940 250000:$0.2137 25000:$0.2476 2500:$0.2532
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3861In Stock	1000:$0.2878 500:$0.3597 100:$0.4550 10:$0.5940 1:$0.6700
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3861In Stock	1000:$0.2878 500:$0.3597 100:$0.4550 10:$0.5940 1:$0.6700
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.2212 12500:$0.2270 5000:$0.2357 2500:$0.2532
IPD090N03LGATMA1 DISTI # 32378537	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	161	31:$0.6737
IPD090N03LGXT DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 5000	25000:$0.2049 15000:$0.2099 10000:$0.2149 5000:$0.2209 2500:$0.2269
IPD090N03L G DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R - Bulk (Alt: IPD090N03LGATMA1) RoHS: Compliant Min Qty: 1667 Container: Bulk	Americas - 0	16670:$0.1899 8335:$0.1939 5001:$0.1999 3334:$0.2079 1667:$0.2159
IPD090N03LGATMA1 DISTI # 50Y2025	Infineon Technologies AG	MOSFET Transistor, N Channel, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V RoHS Compliant: Yes	357	1000:$0.2700 500:$0.2920 250:$0.3140 100:$0.3360 50:$0.3980 25:$0.4600 10:$0.5210 1:$0.6260
IPD090N03LGATMA1 DISTI # 726-IPD090N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 40A DPAK-2 RoHS: Compliant	5138	1:$0.6200 10:$0.5160 100:$0.3330 1000:$0.2670 2500:$0.2250 10000:$0.2170 25000:$0.2080
IPD090N03LGATMA1	Infineon Technologies AG	N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 RoHS: Not Compliant	100Cut Tape/Mini-Reel	1:$0.3750 50:$0.2800 100:$0.2700 250:$0.2500 500:$0.2400
IPD090N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant	38680	1000:$0.2000 500:$0.2100 100:$0.2200 25:$0.2300 1:$0.2400
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,30A,42W,PG-TO252-3	3204	1000:$0.2399 100:$0.2579 10:$0.2984 3:$0.3705 1:$0.5338
IPD090N03LGATMA1 DISTI # 2480820	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3	397	500:£0.2010 250:£0.2290 100:£0.2570 10:£0.4420 1:£0.5470
IPD090N03LGATMA1 DISTI # 2480820	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3 RoHS: Compliant	357	1000:$0.3590 500:$0.4140 100:$0.4910 10:$0.6010 1:$0.6900
IPD090N03LGATMA1 DISTI # 2480820RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3 RoHS: Compliant	0	1000:$0.3590 500:$0.4140 100:$0.4910 10:$0.6010 1:$0.6900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: STM32F767ZIT6 OMO.#: OMO-STM32F767ZIT6	ARM Microcontrollers - MCU 16/32-BITS MICROS
	Mfr.#: TPS7A1901DRBR OMO.#: OMO-TPS7A1901DRBR	LDO Voltage Regulators 40-V 450-mA low-IQ low-dropout (LDO) linear regulator with power good 8-SON -40 to 125
	Mfr.#: C503B-RAN-CZ0C0AA1 OMO.#: OMO-C503B-RAN-CZ0C0AA1	Standard LEDs - Through Hole Red Round
	Mfr.#: NUCLEO-F767ZI OMO.#: OMO-NUCLEO-F767ZI	Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
	Mfr.#: STM32F767ZIT6 OMO.#: OMO-STM32F767ZIT6-STMICROELECTRONICS	IC MCU 32BIT 2MB FLASH 144LQFP
	Mfr.#: 43030-0038 OMO.#: OMO-43030-0038-1190	Crimp Terminal 18AWG Phosphor Bronze F Tin Micro-Fit™ Reel
	Mfr.#: NUCLEO-F767ZI OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS	STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
	Mfr.#: TPS7A1901DRBR OMO.#: OMO-TPS7A1901DRBR-TEXAS-INSTRUMENTS	IC REG LINEAR POS ADJ 450MA 8SON
	Mfr.#: C503B-RAN-CZ0C0AA1 OMO.#: OMO-C503B-RAN-CZ0C0AA1-CREE	ROUND 503-B SERIES LED -RED CO
	Mfr.#: 47725-6010 OMO.#: OMO-47725-6010-393	Conn Housing M 12 POS 3.5mm Crimp ST Panel Mount Black Tray

Disponibilità

Azione:: Available
Su ordine:: 1988
Inserisci la quantità:

Il prezzo attuale di IPD090N03LGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,62 USD~~; ~~0,62 USD~~

10: ~~0,52 USD~~; ~~5,16 USD~~

100: ~~0,33 USD~~; ~~33,30 USD~~

1000: ~~0,27 USD~~; ~~267,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

IPD090N03LG 6
IPD090N03L 8
IPD090 9
IPD09 29
IPD0 217
IPD 1152

Prodotti più recenti

XC6227 Series Regulator

Torex's XC6227 series is a high-speed LDO regulator with the ability to operate with high accuracy, low noise, and high ripple rejection.
Compare IPD090N03LGATMA1

IPD090N03LG vs IPD090N03LGATMA1 vs IPD090N03LGATMA1CUTTAPE
XMC4700 and XMC4800 Family of Microcontrollers

Infineon Technologies’ XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
TLF502x1EL Step-Down DC / DC

Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
XC9261 Series Step-Down DC/DC Converters

Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
LITIX™ Automotive LED Driver ICs

LITIX automotive LED driver ICs from Infineon use a constant-current regulator that enables stable brightness over the whole automotive temperature and voltage range.

More Newest Products

IPD090N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes