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CY7C1318KV18-250BZXI

CY7C1318KV18-250BZXI
Mfr. #:
CY7C1318KV18-250BZXI
Produttore:
Cypress Semiconductor
Descrizione:
SRAM 18Mb 250Mhz 1.8V 1M x 18 DDR II SRAM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CY7C1318KV18-250BZXI Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CY7C1318KV18-250BZXI maggiori informazioni CY7C1318KV18-250BZXI Product Details
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore di cipresso
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
-
Frequenza massima di clock:
250 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
1.9 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
380 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
FBGA-165
Confezione:
Vassoio
Tipo di memoria:
Volatile
Serie:
CY7C1318KV18
Tipo:
Sincrono
Marca:
Semiconduttore di cipresso
Sensibile all'umidità:
sì
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
136
sottocategoria:
Memoria e archiviazione dati
Tags
CY7C1318KV18-250BZX, CY7C1318KV18-2, CY7C1318K, CY7C1318, CY7C131, CY7C13, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, FBGA-165, RoHS
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 2M x 8 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II SIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 16MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***or
IC SRAM 18MBIT PARALLEL 165FBGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA T/R
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
Cypress QDR-II DDR-II Sync SRAM
Cypress QDR-II is a high performance, dual-port SRAM memory. QDR-II SRAM offers a maximum speed of 333 MHz, densities up to 144 Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Parte # Mfg. Descrizione Azione Prezzo
CY7C1318KV18-250BZXI
DISTI # CY7C1318KV18-250BZXI-ND		Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		133In Stock
  • 272:$19.9796
  • 136:$20.5307
  • 50:$23.3324
  • 25:$24.0980
  • 10:$24.9550
  • 1:$26.5500
CY7C1318KV18-250BZXICypress SemiconductorDDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
RoHS: Compliant		42
  • 1000:$25.9000
  • 500:$27.2600
  • 100:$28.3800
  • 25:$29.6000
  • 1:$31.8700
CY7C1318KV18-250BZXI
DISTI # 727-7C1318KV18250BZX		Cypress SemiconductorSRAM 18Mb 250Mhz 1.8V 1M x 18 DDR II SRAM
RoHS: Compliant		68
  • 1:$26.5400
  • 5:$25.6700
  • 10:$24.8900
  • 25:$24.1000
  • 50:$23.2100
  • 100:$20.5300
  • 250:$19.9800
Immagine Parte # Descrizione
6469169-1

Mfr.#: 6469169-1

OMO.#: OMO-6469169-1-TE-CONNECTIVITY

 CONN HDR HI SPEED 60POS EDGE MT
135101-01-24.00

Mfr.#: 135101-01-24.00

OMO.#: OMO-135101-01-24-00-AMPHENOL-RF

 Cable Assembly RG316 0.609m SMA to SMA PL-PL Bag
EVAL-SDP-CH1Z

Mfr.#: EVAL-SDP-CH1Z

OMO.#: OMO-EVAL-SDP-CH1Z-ANALOG-DEVICES

 BOARD EVAL SDP CH1Z
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di CY7C1318KV18-250BZXI è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
26,54 USD
26,54 USD
5
25,67 USD
128,35 USD
10
24,89 USD
248,90 USD
25
24,10 USD
602,50 USD
50
23,21 USD
1 160,50 USD
100
20,53 USD
2 053,00 USD
250
19,98 USD
4 995,00 USD
500
19,61 USD
9 805,00 USD
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