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IXTA26P20P

IXTA26P20P
Mfr. #:
IXTA26P20P
Produttore:
Littelfuse
Descrizione:
MOSFET -26.0 Amps -200V 0.170 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTA26P20P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTA26P20P DatasheetIXTA26P20P Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263AA-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
26 A
Rds On - Resistenza Drain-Source:
170 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
56 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
300 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
4.83 mm
Lunghezza:
10.41 mm
Serie:
IXTA26P20
Tipo di transistor:
1 P-Channel
Larghezza:
9.65 mm
Marca:
IXYS
Transconduttanza diretta - Min:
10 S
Tempo di caduta:
21 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
33 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
46 ns
Tempo di ritardo di accensione tipico:
18 ns
Unità di peso:
0.056438 oz
Tags
IXTA26P2, IXTA26P, IXTA26, IXTA2, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3
***ark
Mosfet, P-Ch, 200V, 26A, To-263Aa Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:250V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***nell
MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263
***ure Electronics
SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK
***nsix Microsemi
Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***ure Electronics
IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
***ark
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***p One Stop
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***nell
MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 136W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
SUM40N15-38-E3 N-channel MOSFET Transistor; 40 A; 150 V; 2+Tab-Pin TO-263
***ure Electronics
Single N-Channel 150 V 38 mO 38 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
IXTA26P20P
DISTI # 33633378		IXYS CorporationTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		450
  • 50:$3.4062
IXTA26P20P
DISTI # 32711095		IXYS CorporationTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		190
  • 1000:$2.5641
  • 500:$3.0403
  • 100:$3.7546
  • 50:$4.1210
  • 5:$5.1282
IXTA26P20P
DISTI # IXTA26P20P-ND		IXYS CorporationMOSFET P-CH 200V 26A TO-263
RoHS: Compliant
Min Qty: 1
Container: Tube		1590In Stock
  • 2500:$2.5900
  • 500:$3.0710
  • 100:$3.7925
  • 50:$4.1626
  • 10:$4.6250
  • 1:$5.1800
IXTA26P20P TRL
DISTI # V36:1790_19817464		IXYS CorporationIXTA26P20P TRL0
    IXTA26P20P
    DISTI # V36:1790_15877950    		IXYS CorporationTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
    RoHS: Compliant    		0
    • 1000:$2.5850
    • 500:$2.9710
    • 100:$3.7730
    • 50:$4.0970
    • 1:$5.1350
    IXTA26P20PIXYS CorporationSingle P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3
    RoHS: Compliant    		756Tube
    • 50:$3.5800
    • 100:$3.4000
    IXTA26P20P
    DISTI # 747-IXTA26P20P    		IXYS CorporationMOSFET -26.0 Amps -200V 0.170 Rds
    RoHS: Compliant    		1175
    • 1:$5.1800
    • 10:$4.6700
    • 25:$4.6300
    • 50:$4.1600
    • 100:$3.7900
    • 250:$3.7200
    • 500:$3.0700
    • 1000:$2.5900
    • 2500:$2.5500
    IXTA26P20P
    DISTI # IXTA26P20P    		IXYS CorporationTransistor: P-MOSFET,PolarP™,unipolar,-200V,-26A,300W,TO263100
    • 1:$3.8400
    • 3:$3.4500
    • 10:$3.0600
    • 50:$2.7400
    IXTA26P20P
    DISTI # XSFP00000020468    		IXYS Corporation 
    RoHS: Compliant    		408 in Stock0 on Order
    • 408:$3.9800
    • 28:$4.2100
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    OMO.#: OMO-RT8122-10-6M0-SCHAFFNER-EMC

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    Mfr.#: ABS07-32.768KHZ-7-T

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    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IXTA26P20P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    5,18 USD
    5,18 USD
    10
    4,67 USD
    46,70 USD
    25
    4,63 USD
    115,75 USD
    50
    4,16 USD
    208,00 USD
    100
    3,79 USD
    379,00 USD
    250
    3,72 USD
    930,00 USD
    500
    3,07 USD
    1 535,00 USD
    1000
    2,59 USD
    2 590,00 USD
    2500
    2,55 USD
    6 375,00 USD
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