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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMV19N60E DISTI # 70241493 | Fuji Electric Co Ltd | IC,MOSFET,N-Channel,FAP-E3 Planar,600V,19A,130W,TO-220F(SLS) RoHS: Compliant | 0 |
|
| FMH19N60E DISTI # 70241494 | Fuji Electric Co Ltd | IC,MOSFET,N-Channel,FAP-E3 Planar,600V,19A,315W,TO-3P(Q) RoHS: Compliant | 0 |
|
| FMR19N60ES DISTI # FE0000000001047 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV19N60E-P DISTI # FE0000000001086 | Fuji Electric Co Ltd | Power Field-Effect Transistor,19AI(D),600V,0.365ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 0 in Stock0 on Order |
|
| FMR19N60ESSC DISTI # FE0000000004654 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMA19N60E-P DISTI # FE0000000001761 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
|
| FMR19N60E DISTI # FE0000000001046 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV19N60ES-P DISTI # FE0000000001087 | Fuji Electric Co Ltd | Power Field-Effect Transistor,19AI(D),600V,0.365ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 0 in Stock0 on Order |
|
| FMR19N60E-51FRSC DISTI # FE0000000004652 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH19N60ES-S33PPQ-P DISTI # FE0000000004445 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH19N60ESQ-P DISTI # FE0000000000947 | Fuji Electric Co Ltd | Power Field-Effect Transistor,19AI(D),600V,0.365ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
|
| FMA19N60E-S25PPSC-P DISTI # FE0000000004337 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV19N60ES-S25PPSC-P DISTI # FE0000000004776 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH19N60E-S33PPQ-P DISTI # FE0000000004443 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV19N60E-S25PP-P DISTI # FE0000000004774 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ESC DISTI # FE0000000004653 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH19N60EQ-P DISTI # FE0000000000946 | Fuji Electric Co Ltd | Power Field-Effect Transistor,19AI(D),600V,0.365ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: 19N10L-TN3-R OMO.#: OMO-19N10L-TN3-R-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N10VL-TM3-T OMO.#: OMO-19N10VL-TM3-T-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N10VL-TN3-R OMO.#: OMO-19N10VL-TN3-R-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N10VL-TN3-T OMO.#: OMO-19N10VL-TN3-T-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N20C OMO.#: OMO-19N20C-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N57E OMO.#: OMO-19N57E-1190 |
Nuovo e originale |
|
|
Mfr.#: 19N60 OMO.#: OMO-19N60-1190 |
Nuovo e originale |
|
|
Mfr.#: 19NCA OMO.#: OMO-19NCA-1190 |
Nuovo e originale |
|
|
Mfr.#: 19NM60 OMO.#: OMO-19NM60-1190 |
Nuovo e originale |
|
|
Mfr.#: 19NS OMO.#: OMO-19NS-1190 |
Nuovo e originale |