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FDMS8050ET30

FDMS8050ET30
Mfr. #:
FDMS8050ET30
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET FET 30V 0.65 MOHM PQFN56
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMS8050ET30 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDMS8050ET30 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-56-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
423 A
Rds On - Resistenza Drain-Source:
650 uOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
204 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
180 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
PowerTrench Power Clip
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
6.25 mm
Serie:
FDMS8050ET30
Larghezza:
5.1 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
333 S
Tempo di caduta:
16 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
22 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
87 ns
Tempo di ritardo di accensione tipico:
29 ns
Unità di peso:
0.001993 oz
Tags
FDMS80, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ
***et Europe
Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R
***ical
Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R
***ure Electronics
MOSFET N-CH 30V 55A 8-PQFN
***i-Key
MOSFET N-CH 30V 8-PQFN
***et
PT8 N 30/20 IN POWERCLIP 56 SINGLE
***ark
TAPE REEL / PT8 N 30/20 P 56 S
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:423A; Drain Source Voltage Vds:30V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:180W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 30V, 423A, POWER 56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:423A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):500µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:180W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDMS8050ET30
DISTI # V72:2272_06338143		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R185
  • 100:$1.5710
  • 25:$1.7120
  • 10:$1.9020
  • 1:$2.3243
FDMS8050ET30
DISTI # V36:1790_06338143		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R0
  • 3000000:$1.3710
  • 1500000:$1.3730
  • 300000:$1.4700
  • 30000:$1.6200
  • 3000:$1.6440
FDMS8050ET30
DISTI # FDMS8050ET30CT-ND		ON SemiconductorMOSFET N-CH 30V 55A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1414In Stock
  • 1000:$1.7824
  • 500:$2.1134
  • 100:$2.4826
  • 10:$3.0300
  • 1:$3.3700
FDMS8050ET30
DISTI # FDMS8050ET30DKR-ND		ON SemiconductorMOSFET N-CH 30V 55A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1414In Stock
  • 1000:$1.7824
  • 500:$2.1134
  • 100:$2.4826
  • 10:$3.0300
  • 1:$3.3700
FDMS8050ET30
DISTI # FDMS8050ET30TR-ND		ON SemiconductorMOSFET N-CH 30V 55A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.5822
  • 3000:$1.6440
FDMS8050ET30
DISTI # 25921914		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R185
  • 5:$2.3243
FDMS8050ET30
DISTI # FDMS8050ET30		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Bulk (Alt: FDMS8050ET30)
Min Qty: 191
Container: Bulk		Americas - 0
  • 573:$1.5900
  • 955:$1.5900
  • 1910:$1.5900
  • 191:$1.6900
  • 382:$1.6900
FDMS8050ET30
DISTI # FDMS8050ET30		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin PQFN T/R (Alt: FDMS8050ET30)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.3900
  • 18000:€1.4900
  • 6000:€1.5900
  • 12000:€1.5900
  • 3000:€1.7900
FDMS8050ET30
DISTI # FDMS8050ET30		ON SemiconductorTrans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS8050ET30)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 18000:$1.3900
  • 30000:$1.3900
  • 3000:$1.4900
  • 6000:$1.4900
  • 12000:$1.4900
FDMS8050ET30
DISTI # 49Y8339		ON SemiconductorFET 30V 0.65 MOHM PQFN56 / REEL0
  • 30000:$1.4500
  • 18000:$1.4800
  • 12000:$1.5300
  • 6000:$1.6500
  • 3000:$1.7700
  • 1:$1.8500
FDMS8050ET30
DISTI # 46AC0791		ON SemiconductorMOSFET, N-CH, 30V, 423A, POWER 56-8,Transistor Polarity:N Channel,Continuous Drain Current Id:423A,Drain Source Voltage Vds:30V,On Resistance Rds(on):500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1744
  • 1000:$1.6700
  • 500:$1.8100
  • 250:$1.9100
  • 100:$1.9600
  • 50:$2.0000
  • 25:$2.0500
  • 10:$2.0900
  • 1:$2.1400
FDMS8050ET30
DISTI # 512-FDMS8050ET30		ON SemiconductorMOSFET FET 30V 0.65 MOHM PQFN56
RoHS: Compliant		24542
  • 1:$2.1200
  • 250:$1.8900
  • 500:$1.7900
  • 1000:$1.6500
  • 3000:$1.5700
FDMS8050ET30Fairchild Semiconductor CorporationPower Field-Effect Transistor
RoHS: Compliant		29400
  • 1000:$1.7200
  • 500:$1.8100
  • 100:$1.8900
  • 25:$1.9700
  • 1:$2.1200
FDMS8050ET30
DISTI # 2825172		ON SemiconductorMOSFET, N-CH, 30V, 423A, POWER 56-81736
  • 500:£1.3900
  • 250:£1.4700
  • 100:£1.5600
  • 10:£1.6500
  • 1:£1.8800
FDMS8050ET30
DISTI # 2825172		ON SemiconductorMOSFET, N-CH, 30V, 423A, POWER 56-8
RoHS: Compliant		1744
  • 1000:$2.7700
  • 500:$3.0500
  • 250:$3.4800
  • 100:$3.8700
  • 10:$4.4600
  • 1:$5.1200
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Disponibilità
Azione:
24
Su ordine:
2007
Inserisci la quantità:
Il prezzo attuale di FDMS8050ET30 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,12 USD
2,12 USD
250
1,89 USD
472,50 USD
500
1,79 USD
895,00 USD
1000
1,65 USD
1 650,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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