BSC057N08NS3 G

BSC057N08NS3 G
Mfr. #:
BSC057N08NS3 G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC057N08NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
BSC057N08NS3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
BSC057N08NS3GATMA1 BSC057N08NS3GXT SP000447542
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
9 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.5 V
Rds-On-Drain-Source-Resistenza
5.7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
32 ns
Tempo di ritardo all'accensione tipico
16 ns
Qg-Gate-Carica
56 nC
Transconduttanza diretta-Min
80 S 40 S
Modalità canale
Aumento
Tags
BSC057N08NS3, BSC057N08, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.9314
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3G
DISTI # BSC057N08NS3 G
Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC057N08NS3GATMA1
    DISTI # BSC057N08NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.7499
    • 10000:$0.7229
    • 20000:$0.6969
    • 30000:$0.6739
    • 50000:$0.6619
    BSC057N08NS3GATMA1
    DISTI # 79X1332
    Infineon Technologies AGMOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$1.9200
    • 10:$1.6300
    • 25:$1.5200
    • 50:$1.4200
    • 100:$1.3100
    • 250:$1.2300
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3 G
    DISTI # 726-BSC057N08NS3G
    Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant
    0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GATMA1
    DISTI # 726-BSC057N08NS3GATM
    Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant
    0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GInfineon Technologies AGPower Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    Europe - 2495
      BSC057N08NS3GATMA1
      DISTI # 2432707
      Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 5:£1.7200
      • 25:£1.5800
      • 100:£1.2600
      BSC057N08NS3GATMA1
      DISTI # 2432707
      Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GATMA1
      DISTI # 2432707RL
      Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GInfineon Technologies AG80V,100A,N-channel power MOSFET40
      • 1:$1.2600
      • 100:$1.0500
      • 500:$0.9200
      • 1000:$0.9000
      Immagine Parte # Descrizione
      BSC057N03MS G

      Mfr.#: BSC057N03MS G

      OMO.#: OMO-BSC057N03MS-G

      MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3M
      BSC057N08NS3GATMA1

      Mfr.#: BSC057N08NS3GATMA1

      OMO.#: OMO-BSC057N08NS3GATMA1

      MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC057N03LS

      Mfr.#: BSC057N03LS

      OMO.#: OMO-BSC057N03LS-1190

      Nuovo e originale
      BSC057N03LS G

      Mfr.#: BSC057N03LS G

      OMO.#: OMO-BSC057N03LS-G-1190

      Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R (Alt: BSC057N03LS G)
      BSC057N03LSGATMA1 , TDA8

      Mfr.#: BSC057N03LSGATMA1 , TDA8

      OMO.#: OMO-BSC057N03LSGATMA1-TDA8-1190

      Nuovo e originale
      BSC057N03MSGATMA1

      Mfr.#: BSC057N03MSGATMA1

      OMO.#: OMO-BSC057N03MSGATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 30V 71A TDSON-8
      BSC057N03MSGATMA1 , TDA8

      Mfr.#: BSC057N03MSGATMA1 , TDA8

      OMO.#: OMO-BSC057N03MSGATMA1-TDA8-1190

      Nuovo e originale
      BSC057N08NS3 G

      Mfr.#: BSC057N08NS3 G

      OMO.#: OMO-BSC057N08NS3-G-1190

      MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC057N08NS3G

      Mfr.#: BSC057N08NS3G

      OMO.#: OMO-BSC057N08NS3G-1190

      Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
      BSC057N08NS3G , TDA8035H

      Mfr.#: BSC057N08NS3G , TDA8035H

      OMO.#: OMO-BSC057N08NS3G-TDA8035H-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di BSC057N08NS3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,42 USD
      1,42 USD
      10
      1,35 USD
      13,47 USD
      100
      1,28 USD
      127,58 USD
      500
      1,20 USD
      602,45 USD
      1000
      1,13 USD
      1 134,00 USD
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