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AS4C512M16D3LB-12BCNTR

AS4C512M16D3LB-12BCNTR
Mfr. #:
AS4C512M16D3LB-12BCNTR
Produttore:
Alliance Memory
Descrizione:
DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Commercial (Extended) (0 95 C) 96-ball FBGA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C512M16D3LB-12BCNTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C512M16D3LB-12BCNTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM - DDR3L
Larghezza bus dati:
16 bit
Organizzazione:
512 M x 16
Pacchetto/custodia:
FBGA-96
Dimensione della memoria:
8 Gbit
Frequenza massima di clock:
800 MHz
Tensione di alimentazione - Max:
1.45 V
Tensione di alimentazione - Min:
1.283 V
Corrente di alimentazione - Max:
122 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 95 C
Serie:
AS4C512M16D3LB-12
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
sì
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
2000
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C512M16D3LB, AS4C512M1, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
Immagine Parte # Descrizione
AS4C512M16D3LB-12BINTR

Mfr.#: AS4C512M16D3LB-12BINTR

OMO.#: OMO-AS4C512M16D3LB-12BINTR

 DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Industrial (-40 95 C) 96-ball FBGA
AS4C512M16D3LA-10BINTR

Mfr.#: AS4C512M16D3LA-10BINTR

OMO.#: OMO-AS4C512M16D3LA-10BINTR

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BIN

Mfr.#: AS4C512M16D3LA-12BIN

OMO.#: OMO-AS4C512M16D3LA-12BIN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BCNTR

Mfr.#: AS4C512M16D3LA-12BCNTR

OMO.#: OMO-AS4C512M16D3LA-12BCNTR

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BCN

Mfr.#: AS4C512M16D3LA-12BCN

OMO.#: OMO-AS4C512M16D3LA-12BCN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-10BIN

Mfr.#: AS4C512M16D3LA-10BIN

OMO.#: OMO-AS4C512M16D3LA-10BIN

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3LB-12BCN

Mfr.#: AS4C512M16D3LB-12BCN

OMO.#: OMO-AS4C512M16D3LB-12BCN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, 0 C to 95 C
AS4C512M16D3LB-12BIN

Mfr.#: AS4C512M16D3LB-12BIN

OMO.#: OMO-AS4C512M16D3LB-12BIN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, -40 C to 95 C
AS4C512M16D3L-12BCNTR

Mfr.#: AS4C512M16D3L-12BCNTR

OMO.#: OMO-AS4C512M16D3L-12BCNTR

 DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
AS4C512M16D3L-12BIN

Mfr.#: AS4C512M16D3L-12BIN

OMO.#: OMO-AS4C512M16D3L-12BIN-ALLIANCE-MEMORY

 IC DRAM 8G PARALLEL 96FBGA
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di AS4C512M16D3LB-12BCNTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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