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PD55025-E

PD55025-E
Mfr. #:
PD55025-E
Produttore:
STMicroelectronics
Descrizione:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD55025-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PD55025-E maggiori informazioni PD55025-E Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
7 A
Vds - Tensione di rottura Drain-Source:
40 V
Guadagno:
14.5 dB
Potenza di uscita:
25 W
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerSO-10RF-Formed-4
Confezione:
Tubo
Configurazione:
Separare
Altezza:
3.5 mm
Lunghezza:
7.5 mm
Frequenza operativa:
1 GHz
Serie:
PD55025-E
Tipo:
MOSFET di potenza RF
Larghezza:
9.4 mm
Marca:
STMicroelectronics
Modalità canale:
Aumento
Sensibile all'umidità:
sì
Pd - Dissipazione di potenza:
79 W
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
400
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
20 V
Unità di peso:
0.105822 oz
Tags
PD55025, PD5502, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans RF MOSFET N-CH 40V 7A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
***ure Electronics
PD55025-E Series 500 MHz 25 W 40 V N-Channel RF Power Transistor - POWERSO-10RF
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***icroelectronics
25W 12.5V 500MHz LDMOS in powerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual P-CH 40V 8A 8-Pin SOIC T/R
***enic
40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
***emi
P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
***ure Electronics
Single P-Channel 40 V 69 W 27 nC Silicon Surface Mount Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
***ure Electronics
N-Channel 40 V 29 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET, 40V, 7.6A, 29mΩ
***Yang
Trans MOSFET N-CH 40V 7.6A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 40 V 17 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R / MOSFET N-CH 40V 9A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipati
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ
*** Source Electronics
MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
***nell
MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
Parte # Mfg. Descrizione Azione Prezzo
PD55025-E
DISTI # 29496935		STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		200
  • 250:$20.6592
  • 100:$21.6576
  • 50:$24.2208
PD55025-E
DISTI # 497-5301-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube		Temporarily Out of Stock
  • 400:$21.5180
PD55025-E
DISTI # PD55025-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD55025-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$22.1900
  • 800:$21.1900
  • 1600:$20.1900
  • 2400:$19.2900
  • 4000:$18.8900
PD55025-E
DISTI # 511-PD55025-E		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
RoHS: Compliant		384
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
PD55025TR-E
DISTI # 511-PD55025TR-E		STMicroelectronicsRF MOSFET Transistors RF Power Trans N-Channel
RoHS: Compliant		0
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
  • 600:$20.4900
PD55025-E
DISTI # PD55025-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$21.5400
  • 500:$20.3800
  • 1000:$19.3500
Immagine Parte # Descrizione
IS61WV102416FBLL-10T2LI

Mfr.#: IS61WV102416FBLL-10T2LI

OMO.#: OMO-IS61WV102416FBLL-10T2LI

 SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS
PD55015-E

Mfr.#: PD55015-E

OMO.#: OMO-PD55015-E

 RF MOSFET Transistors POWER RF Transistor
PIC18F25Q10T-I/SS

Mfr.#: PIC18F25Q10T-I/SS

OMO.#: OMO-PIC18F25Q10T-I-SS

 8-bit Microcontrollers - MCU 32KB Flash, 2KB RAM, 256B EEPROM, 10b ADC2, 5b DAC, Comp, PWM, CCP, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, EUSART, SPI/I2C, IDLE/DOZE/PMD
NCP4306AADZZZAMN1TBG

Mfr.#: NCP4306AADZZZAMN1TBG

OMO.#: OMO-NCP4306AADZZZAMN1TBG

 Switching Controllers SECONDARY SIDE SYNCH RONOU
RFM-0505S

Mfr.#: RFM-0505S

OMO.#: OMO-RFM-0505S-RECOM-POWER

 1W DC/DC-Converter 'ECONOLINE' SIP4 1kV unreg
PIC18F25Q10T-I/SS

Mfr.#: PIC18F25Q10T-I/SS

OMO.#: OMO-PIC18F25Q10T-I-SS-MICROCHIP-TECHNOLOGY

 IC MCU 8BIT 32KB FLASH 28SSOP
PD55015-E

Mfr.#: PD55015-E

OMO.#: OMO-PD55015-E-STMICROELECTRONICS

 FET RF 40V 500MHZ PWRSO-10
C0603C103K5RACAUTO7411

Mfr.#: C0603C103K5RACAUTO7411

OMO.#: OMO-C0603C103K5RACAUTO7411-1190

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF 0603 X7R 10% AEC-Q200
NCP4306AADZZZAMN1TBG

Mfr.#: NCP4306AADZZZAMN1TBG

OMO.#: OMO-NCP4306AADZZZAMN1TBG-ON-SEMICONDUCTOR

 Secondary Side Synchronous Rectification Driver for High Efficiency SMPS Topologies
FTAS00-10.4AS-4A

Mfr.#: FTAS00-10.4AS-4A

OMO.#: OMO-FTAS00-10-4AS-4A-NKK-SWITCHES

 LCD Touch Panels TOUCH SCREEN, 4-WIRE, 10.4" DIAGONAL, GOLD TAIL
Disponibilità
Azione:
111
Su ordine:
2094
Inserisci la quantità:
Il prezzo attuale di PD55025-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
28,64 USD
28,64 USD
5
28,35 USD
141,75 USD
10
26,42 USD
264,20 USD
25
25,23 USD
630,75 USD
100
22,56 USD
2 256,00 USD
250
21,52 USD
5 380,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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