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BSC098N10NS5ATMA1

BSC098N10NS5ATMA1
Mfr. #:
BSC098N10NS5ATMA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC098N10NS5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
BSC098N10NS5 SP001241598
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Pd-Power-Dissipazione
69 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
4 ns
Ora di alzarsi
5 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
60 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.2 V
Rds-On-Drain-Source-Resistenza
14 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
17 ns
Tempo di ritardo all'accensione tipico
10 ns
Qg-Gate-Carica
22 nC
Transconduttanza diretta-Min
28 S
Modalità canale
Aumento
Tags
BSC098N10NS5A, BSC098, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 9.8 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Mosfet, N-Ch, 100V, 60A, 150Deg C, 69W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0082Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Parte # Mfg. Descrizione Azione Prezzo
BSC098N10NS5ATMA1
DISTI # V72:2272_06383664		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		666
  • 500:$0.8203
  • 250:$0.8740
  • 100:$0.9342
  • 25:$1.0861
  • 10:$1.2067
  • 1:$1.5516
BSC098N10NS5ATMA1
DISTI # V36:1790_06383664		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		0
  • 10000:$0.5389
  • 5000:$0.5629
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3824In Stock
  • 1000:$0.7435
  • 500:$0.9418
  • 100:$1.1401
  • 10:$1.4620
  • 1:$1.6400
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3824In Stock
  • 1000:$0.7435
  • 500:$0.9418
  • 100:$1.1401
  • 10:$1.4620
  • 1:$1.6400
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.6160
  • 5000:$0.6401
BSC098N10NS5ATMA1
DISTI # 31984735		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		666
  • 500:$0.8777
  • 250:$0.9395
  • 100:$1.0043
  • 25:$1.1676
  • 15:$1.2972
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC098N10NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4439
  • 30000:$0.4519
  • 20000:$0.4679
  • 10000:$0.4859
  • 5000:$0.5039
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R (Alt: BSC098N10NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC098N10NS5ATMA1
    DISTI # SP001241598    		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R (Alt: SP001241598)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.4079
    • 30000:€0.4389
    • 20000:€0.4759
    • 10000:€0.5189
    • 5000:€0.6339
    BSC098N10NS5ATMA1
    DISTI # 12AC9448    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes13310
    • 1000:$0.6640
    • 500:$0.8400
    • 250:$0.8950
    • 100:$0.9500
    • 50:$1.0400
    • 25:$1.1400
    • 10:$1.2300
    • 1:$1.4400
    BSC098N10NS5
    DISTI # 726-BSC098N10NS5    		Infineon Technologies AGMOSFET Pwr transistor 100V OptiMOS 5
    RoHS: Compliant    		5083
    • 1:$1.4300
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8320
    • 1000:$0.6570
    • 5000:$0.5820
    • 10000:$0.5610
    BSC098N10NS5ATMA1
    DISTI # 726-BSC098N10NS5ATMA    		Infineon Technologies AGMOSFET Pwr transistor 100V OptiMOS 5
    RoHS: Compliant    		229
    • 1:$1.4300
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8320
    • 1000:$0.6570
    • 5000:$0.5820
    • 10000:$0.5610
    BSC098N10NS5ATMA1
    DISTI # 2709890    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON
    RoHS: Compliant    		12310
    • 1000:$1.1400
    • 500:$1.4300
    • 100:$1.8500
    • 10:$2.3400
    • 1:$2.6300
    BSC098N10NS5ATMA1
    DISTI # 2709890    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON13150
    • 500:£0.6280
    • 250:£0.6700
    • 100:£0.7110
    • 25:£0.8180
    • 5:£0.9250
    Immagine Parte # Descrizione
    BSC098N10NS5ATMA1

    Mfr.#: BSC098N10NS5ATMA1

    OMO.#: OMO-BSC098N10NS5ATMA1

    		 MOSFET Pwr transistor 100V OptiMOS 5
    BSC098N10NS5

    Mfr.#: BSC098N10NS5

    OMO.#: OMO-BSC098N10NS5-1190

    		 MOSFET Pwr transistor 100V OptiMOS 5
    BSC098N10NS5ATMA1INFINEO

    Mfr.#: BSC098N10NS5ATMA1INFINEO

    OMO.#: OMO-BSC098N10NS5ATMA1INFINEO-1190

    		 Nuovo e originale
    BSC098N10NS5ATMA1-CUT TAPE

    Mfr.#: BSC098N10NS5ATMA1-CUT TAPE

    OMO.#: OMO-BSC098N10NS5ATMA1-CUT-TAPE-1190

    		 Nuovo e originale
    BSC098N10NS5ATMA1

    Mfr.#: BSC098N10NS5ATMA1

    OMO.#: OMO-BSC098N10NS5ATMA1-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
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    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    0,67 USD
    0,67 USD
    10
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    532,70 USD
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