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FQPF6N60C

FQPF6N60C
Mfr. #:
FQPF6N60C
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET N-CH/600V/6A/QFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQPF6N60C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
5.5 A
Rds On - Resistenza Drain-Source:
2 Ohms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
40 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQPF6N60C
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
4.8 S
Tempo di caduta:
45 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
45 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
45 ns
Tempo di ritardo di accensione tipico:
15 ns
Parte # Alias:
FQPF6N60C_NL
Unità di peso:
0.080072 oz
Tags
FQPF6N60C, FQPF6N6, FQPF6N, FQPF6, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
MOSFET N-Channel 600V 5.5A TO220F
*** Source Electronics
MOSFET N-CH 600V 5.5A TO-220F
***ser
MOSFETs N-CH/600V/6A/QFET
***ark
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:22A; Power Dissipation:40W; Power, Pd:40W; Transistors, No. of:1; Voltage, Vds Max:600V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220F; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:5.5A; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
FQPF6N60C
DISTI # FQPF6N60C-ND		ON SemiconductorMOSFET N-CH 600V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQPF6N60C
    DISTI # 512-FQPF6N60C    		ON SemiconductorMOSFET N-CH/600V/6A/QFET
    RoHS: Compliant    		0
      FQPF6N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		6057
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      FQPF6N60CFairchild Semiconductor Corporation5.5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB30
      • 12:$1.8600
      • 3:$2.3250
      • 1:$2.7900
      FQPF6N60C
      DISTI # 1095093      		ON SemiconductorMOSFET, N, TO-220F
      RoHS: Compliant      		0
      • 250:$0.9730
      • 100:$1.1500
      • 25:$1.6000
      • 1:$1.9100
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      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di FQPF6N60C è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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