IRF6717MTR1PBF

IRF6717MTR1PBF
Mfr. #:
IRF6717MTR1PBF
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6717MTR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6717MTR1PBF DatasheetIRF6717MTR1PBF Datasheet (P4-P6)IRF6717MTR1PBF Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IOR
categoria di prodotto
FET - Single
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
DirectFET-4
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
96 W
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
220 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Rds-On-Drain-Source-Resistenza
2.1 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
46 nC
Tags
IRF6717, IRF671, IRF67, IRF6, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
***(Formerly Allied Electronics)
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET L2 PACKAGE RATED AT 61
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N CH, 25V, 61A, DIRECTFET L2; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:25V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:4.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:L6; Power Dissipation Pd:4.3W; Power Dissipation Pd:4.3W; Pulse Current Idm:490A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Parte # Mfg. Descrizione Azione Prezzo
IRF6717MTR1PBF
DISTI # V36:1790_16240972
Infineon Technologies AGTrans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R
RoHS: Compliant
1000
  • 10000:$1.7486
  • 5000:$1.8644
  • 2000:$2.0579
  • 1000:$2.3115
IRF6717MTR1PBF
DISTI # IRF6717MTR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6717MTR1PBF
    DISTI # IRF6717MTR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6717MTR1PBF
      DISTI # IRF6717MTR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6717MTR1PBF
        DISTI # 26194649
        Infineon Technologies AGTrans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R
        RoHS: Compliant
        1000
        • 1000:$2.4359
        IRF6717MTR1PBF
        DISTI # 70019603
        Infineon Technologies AGIRF6717MTR1PBF N-channel MOSFET Transistor,38 A,25 V,7-Pin DirectFET MX
        RoHS: Compliant
        0
        • 1000:$1.9000
        • 2000:$1.7200
        IRF6717MTR1PBF
        DISTI # 942-IRF6717MTR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
        RoHS: Compliant
        0
          IRF6717MTR1PBFInternational Rectifier 
          RoHS: Compliant
          Europe - 1000
            IRF6717MTR1PBF
            DISTI # C1S322000674716
            Infineon Technologies AGMOSFETs
            RoHS: Compliant
            1000
            • 1000:$2.4154
            Immagine Parte # Descrizione
            IRF6717MTRPBF

            Mfr.#: IRF6717MTRPBF

            OMO.#: OMO-IRF6717MTRPBF

            MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            IRF6717MTRPBF.

            Mfr.#: IRF6717MTRPBF.

            OMO.#: OMO-IRF6717MTRPBF--1190

            Nuovo e originale
            IRF6717MTR1PBF

            Mfr.#: IRF6717MTR1PBF

            OMO.#: OMO-IRF6717MTR1PBF-INFINEON-TECHNOLOGIES

            IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            IRF6717MTRPBF

            Mfr.#: IRF6717MTRPBF

            OMO.#: OMO-IRF6717MTRPBF-INFINEON-TECHNOLOGIES

            MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            Disponibilità
            Azione:
            Available
            Su ordine:
            5500
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            Prezzo di riferimento (USD)
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            est. Prezzo
            1
            2,58 USD
            2,58 USD
            10
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            24,51 USD
            100
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            232,20 USD
            500
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            1 096,50 USD
            1000
            2,06 USD
            2 064,00 USD
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