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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SPB08P06PGATMA1 DISTI # V72:2272_06384662 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1971 |
|
| SPB08P06PGATMA1 DISTI # V36:1790_06384662 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| SPB08P06P DISTI # SPB08P06P-ND | Infineon Technologies AG | MOSFET P-CH 60V 8.8A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 8.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| SPB08P06PGATMA1 DISTI # 27576379 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1971 |
|
| SPB08P06PGATMA1 DISTI # 31053382 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| SPB08P06PGATMA1 DISTI # SP000102179 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 4000 |
|
| SPB08P06PGAT DISTI # SPB08P06PGATMA1 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB08P06PGATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
|
| SPB08P06PGATMA1 DISTI # 47W3751 | Infineon Technologies AG | MOSFET, P CHANNEL, 60V, 8.8A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.221ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes | 797 |
|
| SPB08P06P G DISTI # 726-SPB08P06PG | Infineon Technologies AG | MOSFET P-Ch -60V 8.8A D2PAK-2 RoHS: Compliant | 1968 |
|
| SPB08P06PGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 4000 |
|
| SPB08P06P | Siemens | 8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET | 40 |
|
| SPB08P06P | Infineon Technologies AG | 8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET | 5 |
|
| SPB08P06PGATMA1 DISTI # 8922201P | Infineon Technologies AG | MOSFET P-CHANNEL 60V 8.8A TO263-3, RL | 2640 |
|
| SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1 | Infineon Technologies AG | Transistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO263-3 | 625 |
|
| SPB08P06P | Infineon Technologies AG | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1000 | |
| SPB08P06PGATMA1 DISTI # 2212898 | Infineon Technologies AG | MOSFET, P-CH, 60V, 8.8A, TO-263 | 1347 |
|
| SPB08P06PGXT | Infineon Technologies AG | -60V,-8.8A,P-channel power MOSFET | 210 |
|
| SPB08P06PGATMA1 DISTI # 2212898 | Infineon Technologies AG | MOSFET, P-CH, 60V, 8.8A, TO-263 RoHS: Compliant | 797 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SPB03C-15 OMO.#: OMO-SPB03C-15 |
Isolated DC/DC Converters |
|
Mfr.#: SPB04N60C3ATMA1 OMO.#: OMO-SPB04N60C3ATMA1 |
MOSFET LOW POWER_LEGACY |
|
|
Mfr.#: SPB07N60C3ATMA1 OMO.#: OMO-SPB07N60C3ATMA1 |
MOSFET LOW POWER_LEGACY |
|
|
Mfr.#: SPB05B-12 OMO.#: OMO-SPB05B-12 |
Isolated DC/DC Converters 18-36Vin 12Vout 42-417mA 5W |
|
Mfr.#: SPB05C-15 OMO.#: OMO-SPB05C-15-MEAN-WELL |
Isolated DC/DC Converters 36-72Vin 15Vout 33-333mA 5W |
|
|
Mfr.#: SPB05C-12 OMO.#: OMO-SPB05C-12-MEAN-WELL |
Isolated DC/DC Converters 36-72Vin 12Vout 42-417mA 5W |
|
|
Mfr.#: SPB04N50C3 OMO.#: OMO-SPB04N50C3-124 |
Darlington Transistors MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3 |
|
|
Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190 |
Nuovo e originale |
|
Mfr.#: SPB08P06P |
MOSFET P-CH 60V 8.8A D2PAK |
|
|
Mfr.#: SPB08P06PGATMA1 |
MOSFET P-CH 60V 8.8A TO-263 |
