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FGH40T65UPD

FGH40T65UPD
Mfr. #:
FGH40T65UPD
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 650 V 80 A 268 W
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGH40T65UPD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGH40T65UPD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
IGBT - Singolo
Serie
-
Confezione
Tubo
Unità di peso
0.225401 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247-3
Potenza-Max
268W
Reverse-Tempo di ripristino-trr
43ns
Corrente-Collettore-Ic-Max
80A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
Sosta sul campo di trincea
Corrente-Collettore-Impulsato-Icm
120A
Vce-su-Max-Vge-Ic
2.3V @ 15V, 40A
Energia di commutazione
1.59mJ (on), 580μJ (off)
Gate-Charge
177nC
Td-on-off-25°C
20ns/144ns
Condizione di test
400V, 40A, 7 Ohm, 15V
Pd-Power-Dissipazione
268 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
650 V
Collettore-Emettitore-Saturazione-Tensione
2.1 V
Continuo-Collettore-Corrente-a-25-C
80 A
Gate-Emettitore-Corrente di dispersione
400 nA
Massima-tensione-gate-emettitore
20 V
Tags
FGH40T6, FGH40T, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
FGHx0T65 650V Field Stop IGBTs
ON Semiconductor FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGH40T65UPD
DISTI # FGH40T65UPD-ND		ON SemiconductorIGBT 650V 80A 268W TO-247AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1350:$2.4476
  • 900:$2.9021
  • 450:$3.2343
  • 10:$4.1610
  • 1:$4.6300
FGH40T65UPD
DISTI # FGH40T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail - Rail/Tube (Alt: FGH40T65UPD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.0900
  • 900:$2.0900
  • 1800:$2.0900
  • 2700:$2.0900
  • 4500:$1.9900
FGH40T65UPD
DISTI # FGH40T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail (Alt: FGH40T65UPD)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FGH40T65UPDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
    RoHS: Compliant    		144
    • 1000:$2.7200
    • 500:$2.8600
    • 100:$2.9800
    • 25:$3.1100
    • 1:$3.3500
    FGH40T65UPD
    DISTI # 512-FGH40T65UPD    		ON SemiconductorIGBT Transistors 650 V 80 A 268 W
    RoHS: Compliant    		6092
    • 1:$4.4100
    • 10:$3.7500
    • 100:$3.2500
    • 250:$3.0900
    • 500:$2.7700
    • 1000:$2.3400
    • 2500:$2.2200
    FGH40T65UPD
    DISTI # 8070773P    		ON SemiconductorIGBTFAIRCHILDFGH40T65UPD, TU338
    • 20:£2.8150
    FGH40T65UPD
    DISTI # 8070773    		ON SemiconductorIGBTFAIRCHILDFGH40T65UPD, PK58
    • 2:£3.3100
    • 20:£2.8150
    Immagine Parte # Descrizione
    FGH40T65SPD-F085

    Mfr.#: FGH40T65SPD-F085

    OMO.#: OMO-FGH40T65SPD-F085

    		 IGBT Transistors 650V 40A Field Stop Trench IGBT
    FGH40N60SMDF

    Mfr.#: FGH40N60SMDF

    OMO.#: OMO-FGH40N60SMDF

    		 IGBT Transistors 600V/40A Field Stop IGBT ver. 2
    FGH40N60SFDTU-F085

    Mfr.#: FGH40N60SFDTU-F085

    OMO.#: OMO-FGH40N60SFDTU-F085

    		 IGBT Transistors N-Ch 40A 600V FS IGBT
    FGH40N60UFTU

    Mfr.#: FGH40N60UFTU

    OMO.#: OMO-FGH40N60UFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 80A 290W TO247
    FGH40T65SPD_F155

    Mfr.#: FGH40T65SPD_F155

    OMO.#: OMO-FGH40T65SPD-F155-126

    		 IGBT Transistors 650V FS Gen3 Trench IGBT
    FGH40T65SQD-F155

    Mfr.#: FGH40T65SQD-F155

    OMO.#: OMO-FGH40T65SQD-F155-ON-SEMICONDUCTOR

    		 650V 40A FS4 TRENCH IGBT
    FGH40N40UFD

    Mfr.#: FGH40N40UFD

    OMO.#: OMO-FGH40N40UFD-1190

    		 Nuovo e originale
    FGH40N60SMD,FGH40N60SFD,

    Mfr.#: FGH40N60SMD,FGH40N60SFD,

    OMO.#: OMO-FGH40N60SMD-FGH40N60SFD--1190

    		 Nuovo e originale
    FGH40N60UFD,FGH40N60SMD,FGH40N60,

    Mfr.#: FGH40N60UFD,FGH40N60SMD,FGH40N60,

    OMO.#: OMO-FGH40N60UFD-FGH40N60SMD-FGH40N60--1190

    		 Nuovo e originale
    FGH40N65UFDTU_F085

    Mfr.#: FGH40N65UFDTU_F085

    OMO.#: OMO-FGH40N65UFDTU-F085-1190

    		 Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Bulk (Alt: FGH40N65UFDTU-F085)
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di FGH40T65UPD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,98 USD
    2,98 USD
    10
    2,84 USD
    28,36 USD
    100
    2,69 USD
    268,65 USD
    500
    2,54 USD
    1 268,65 USD
    1000
    2,39 USD
    2 388,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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