HGTP3N60A4D

HGTP3N60A4D
Mfr. #:
HGTP3N60A4D
Produttore:
ON Semiconductor
Descrizione:
IGBT 600V 17A 70W TO220AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTP3N60A4D Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP3N60A4D DatasheetHGTP3N60A4D Datasheet (P4-P6)HGTP3N60A4D Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTP3N60A, HGTP3N, HGTP3, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Dissipation:70W; Case Style:TO-220AB; Termination Type:Through Hole; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:70W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:47ns; Time, Fall Typ:47ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Parte # Mfg. Descrizione Azione Prezzo
HGTP3N60A4D
DISTI # V36:1790_06359439
ON SemiconductorPWR IGBT 7A,600V,SMPS SERIES N0
    HGTP3N60A4D
    DISTI # HGTP3N60A4D-ND
    ON SemiconductorIGBT 600V 17A 70W TO220AB
    RoHS: Compliant
    Min Qty: 800
    Container: Tube
    Limited Supply - Call
    • 800:$1.4088
    HGTP3N60A4D
    DISTI # HGTP3N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP3N60A4D)
    RoHS: Not Compliant
    Min Qty: 272
    Container: Bulk
    Americas - 0
    • 544:$1.0900
    • 816:$1.0900
    • 1360:$1.0900
    • 2720:$1.0900
    • 272:$1.1900
    HGTP3N60A4D
    DISTI # HGTP3N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP3N60A4D)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube
    Americas - 0
      HGTP3N60A4D
      DISTI # 512-HGTP3N60A4D
      ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant
      0
        HGTP3N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant
        31194
        • 1000:$1.2100
        • 500:$1.2700
        • 100:$1.3300
        • 25:$1.3800
        • 1:$1.4900
        HGTP3N60A4DFairchild Semiconductor Corporation17 A, 600 V, N-CHANNEL IGBT, TO-220AB432
        • 346:$2.5831
        • 81:$2.8962
        • 1:$4.6965
        Immagine Parte # Descrizione
        HGTP30N60C3D

        Mfr.#: HGTP30N60C3D

        OMO.#: OMO-HGTP30N60C3D-1190

        Nuovo e originale
        HGTP3N60A4

        Mfr.#: HGTP3N60A4

        OMO.#: OMO-HGTP3N60A4-ON-SEMICONDUCTOR

        IGBT 600V 17A 70W TO220AB
        HGTP3N60A4 3N60A4

        Mfr.#: HGTP3N60A4 3N60A4

        OMO.#: OMO-HGTP3N60A4-3N60A4-1190

        Nuovo e originale
        HGTP3N60A4-NL

        Mfr.#: HGTP3N60A4-NL

        OMO.#: OMO-HGTP3N60A4-NL-1190

        Nuovo e originale
        HGTP3N60A4D

        Mfr.#: HGTP3N60A4D

        OMO.#: OMO-HGTP3N60A4D-ON-SEMICONDUCTOR

        IGBT 600V 17A 70W TO220AB
        HGTP3N60A4D9A

        Mfr.#: HGTP3N60A4D9A

        OMO.#: OMO-HGTP3N60A4D9A-1190

        Nuovo e originale
        HGTP3N60B3

        Mfr.#: HGTP3N60B3

        OMO.#: OMO-HGTP3N60B3-1190

        Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60B3D

        Mfr.#: HGTP3N60B3D

        OMO.#: OMO-HGTP3N60B3D-1190

        Nuovo e originale
        HGTP3N60C3

        Mfr.#: HGTP3N60C3

        OMO.#: OMO-HGTP3N60C3-1190

        Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60C3D-07

        Mfr.#: HGTP3N60C3D-07

        OMO.#: OMO-HGTP3N60C3D-07-1190

        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
        Inserisci la quantità:
        Il prezzo attuale di HGTP3N60A4D è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,64 USD
        1,64 USD
        10
        1,55 USD
        15,53 USD
        100
        1,47 USD
        147,15 USD
        500
        1,39 USD
        694,90 USD
        1000
        1,31 USD
        1 308,00 USD
        Iniziare con
        Top