OMO ElectronicOMO Electronic
Expand menu
0 Carrello

CY14V101QS-SF108XI

CY14V101QS-SF108XI
Mfr. #:
CY14V101QS-SF108XI
Produttore:
Cypress Semiconductor
Descrizione:
NVRAM 1-Mbit (128KX8) Quad SPI nvSRAM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CY14V101QS-SF108XI Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CY14V101QS-SF108XI maggiori informazioni CY14V101QS-SF108XI Product Details
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore di cipresso
Categoria di prodotto:
NVRAM
RoHS:
Y
Pacchetto/custodia:
SOIC-16
Tipo di interfaccia:
SPI
Dimensione della memoria:
1 Mbit
Organizzazione:
128 k x 8
Larghezza bus dati:
8 bit
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.7 V
Corrente di alimentazione operativa:
33 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
CY14V101
Confezione:
Tubo
Marca:
Semiconduttore di cipresso
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
sì
Pd - Dissipazione di potenza:
1 W
Tipologia di prodotto:
NVRAM
Quantità confezione di fabbrica:
92
sottocategoria:
Memoria e archiviazione dati
Unità di peso:
0.023492 oz
Tags
CY14V101QS-SF, CY14V101QS-S, CY14V101QS, CY14V101Q, CY14V101, CY14V10, CY14V1, CY14V, CY14, CY1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
nvSRAM, 1Mb, QSPI, Up to 108MHz, 2.7/3.6V, SOIC(16), -40°C to 85°C, Tube
***ow.cn
NVRAM NVSRAM Serial-SPI 1Mbit 3V 16-Pin SOIC W Tube
***ark
NV SRAM, 128K X 8BIT, SOIC-16 ROHS COMPLIANT: YES
***ress Semiconductor SCT
Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS
***et
1MB NVSRAM WITH A QUAD SERIAL PERIPHERAL INTERFACE
***NGYU ELECTRONICS
IC NVSRAM 1M SPI 108MHZ 16SOIC
***S
nvSRAM, 1Mb, QSPI, Up to 108MHz, 2.7/3.6V, SOIC(16), -40°C to 85°C, Tube
***ow.cn
NVRAM NVSRAM Serial-SPI 1Mbit 3V/3.3V 16-Pin SOIC W Tube
***ress Semiconductor SCT
Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS
***et
1MB NVSRAM WITH A QUAD SERIAL PERIPHERAL INTERFACE
***NGYU ELECTRONICS
IC NVSRAM 1M SPI 108MHZ 16SOIC
***ark
Nv Sram, 1Mbit, Soic-16; Memory Size:1Mbit; Memory Organisation:128K X 8Bit; Read Access Time:10Ns; Write Access Time:10Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:soic; No. Of Pins:16Pins; Ic Interface Rohs Compliant: Yes
***ure Electronics
CY14B101 Series 1 Mb (128 K x 8) 3.6 V Surface Mount nvSRAM - SOIC-16
***ow.cn
NVRAM NVSRAM Serial-SPI 1Mbit 3.3V 16-Pin SOIC W Tube
***ress Semiconductor SCT
Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS
***i-Key
IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Nvram, Sram, 1Mbit, -40 To 85Deg C; Memory Type:sram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:serial, Spi; Access Time:-; Memory Case Style:soic; No. Of Pins:16Pins; Supply Voltage Min:2.7V Rohs Compliant: Yes
***ure Electronics
CY14B101Q Series 3 V 1 Mb (128 K × 8) Autostore nvSRAM - SOIC-8
***ical
NVRAM NVSRAM Serial-SPI 1Mbit 3.3V 8-Pin SOIC N Tube
***ress Semiconductor SCT
Nonvolatile SRAM, 1024 Kb Density, SOP-8, RoHS
***ment14 APAC
NV SRAM, PARALLEL, 1MBIT, SOIC-8
***i-Key
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ponent Stockers USA
128K X 8 NON-VOLATILE SRAM PDSO8
***ark
Nv Sram, Parallel, 1Mbit, Soic-8; Memory Size:1Mbit; Memory Organisation:128K X 8Bit; Read Access Time:45Ns; Write Access Time:45Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:soic; No. Of Pins:8Pins; Ic Rohs Compliant: Yes
***S
Asynchronous SRAM, 4Mb, 512Kx8, 45ns, 3V, TSOPII(32), -40°C to 85°C, Tray
***nell
SRAM, 4MBIT, -40 TO 85DEG C; Memory Size: 4Mbit; SRAM Memory Configuration: 512K x 8bit; Supply Voltage Range: 2.7V to 3.6V; Memory Case Style: TSOP-II; No. of Pins: 32Pins; Access Time: 45ns; Operating Temperature Min: -40°C;
***esas
Single 3V supply: 2.7V to 3.6V Access time: 45ns (max.) Current consumption: Standby: 0.4µA (typ.) Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation
CY14V101 1-Mb Quad SPI nvSRAM
Cypress Semiconductor CY14V101 1-Mbit (128K × 8) Quad SPI nvSRAM couples a 1-Mbit nvSRAM with a QPI interface. The QPI enables writing and reading of the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of specific opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS FLASH Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) occur automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). Users may also initiate the STORE and RECALL operations through SPI instructions.Learn More
Immagine Parte # Descrizione
AG302-63G

Mfr.#: AG302-63G

OMO.#: OMO-AG302-63G

 RF Amplifier DC-6000MHz 15.5dB Gain@900MHz
LT6106HS5#TRMPBF

Mfr.#: LT6106HS5#TRMPBF

OMO.#: OMO-LT6106HS5-TRMPBF

 Current Sense Amplifiers L Cost, 36V Hi Side C Sense Amp
LAN8720A-CP

Mfr.#: LAN8720A-CP

OMO.#: OMO-LAN8720A-CP

 Ethernet ICs RMII 10/100 ETH XCVR w/HP AutoMDIXSupport
UCLAMP3301D.TCT

Mfr.#: UCLAMP3301D.TCT

OMO.#: OMO-UCLAMP3301D-TCT

 TVS Diodes / ESD Suppressors TVS 1-LINE UNI,15A(8/20)5.3V
BD46401G-TR

Mfr.#: BD46401G-TR

OMO.#: OMO-BD46401G-TR

 Supervisory Circuits RESET DETEC VOLT 4.1V
IRLR2908TRPBF

Mfr.#: IRLR2908TRPBF

OMO.#: OMO-IRLR2908TRPBF

 MOSFET 80V 1 N-CH HEXFET 28mOhms 22nC
PCR1C471MCL1GS

Mfr.#: PCR1C471MCL1GS

OMO.#: OMO-PCR1C471MCL1GS

 Aluminum Organic Polymer Capacitors 16V 470uF 20%
IRLR2908TRPBF

Mfr.#: IRLR2908TRPBF

OMO.#: OMO-IRLR2908TRPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 30A DPAK
RDEC71H106K3K1H03B

Mfr.#: RDEC71H106K3K1H03B

OMO.#: OMO-RDEC71H106K3K1H03B-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - Leaded
LAN8720A-CP

Mfr.#: LAN8720A-CP

OMO.#: OMO-LAN8720A-CP-MICROCHIP-TECHNOLOGY

 IC TXRX ETHERNET 24QFN
Disponibilità
Azione:
122
Su ordine:
2105
Inserisci la quantità:
Il prezzo attuale di CY14V101QS-SF108XI è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
13,74 USD
13,74 USD
10
12,91 USD
129,10 USD
25
12,55 USD
313,75 USD
50
12,40 USD
620,00 USD
100
11,05 USD
1 105,00 USD
250
10,50 USD
2 625,00 USD
500
10,40 USD
5 200,00 USD
1000
10,05 USD
10 050,00 USD
Iniziare con
Prodotti più recenti
  • PSoC® 4 BLE 256 KB Module with Bluetooth®
    PSoC® 4 BLE 256 KB Module with Bluetooth®
    Cypress' PSoC 4 BLE 256 KB device, two crystals for the antenna matching network, a PCB antenna and other passives, while providing access to all GPIOs of the device.
  • T543 Series COTS Polymer Electrolytic
    T543 Series COTS Polymer Electrolytic
    KEMET Organic Capacitor (KO-CAP) is a solid electrolytic capacitor with a conductive polymer cathode capable of delivering low ESR and capacitance retention at high frequencies.
  • HK Series Inductors
    HK Series Inductors
    TAIYO YUDEN's HK series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • Compare CY14V101QS-SF108XI
    Compare CY14V101QS-SF108XI
    CY14V101QSSF108XI vs CY14V101QSSF108XIT vs CY14V101QSSF108XQ
  • Piezoelectric Acoustic Modules
    Piezoelectric Acoustic Modules
    KEMET's multilayer piezoelectric bimorph actuators are ceramic elements used to convert electrical energy into mechanical energy such as displacement or force.
  • CY8CKIT-042-BLE Bluetooth® Low Energy Develop
    CY8CKIT-042-BLE Bluetooth® Low Energy Develop
    The Cypress CY8CKIT-042-BLE development kit supports system-level designs including example projects to enable Bluetooth Low Energy mixed-signal embedded designs.
More Newest Products
Top