CSD19535KTTT

Mfr. #:: CSD19535KTTT
Descrizione:: MOSFET 100V N-Channel NexFET Power MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CSD19535KTTT Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: CSD19535KTTT maggiori informazioni CSD19535KTTT Product Details

Attributo del prodotto
Valore attributo

Produttore:: Texas Instruments

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 100 V

Id - Corrente di scarico continua:: 200 A

Rds On - Resistenza Drain-Source:: 3.4 mOhms

Vgs th - Tensione di soglia gate-source:: 2.2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 75 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 300 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: NexFET

Confezione:: Bobina

Altezza:: 19.7 mm

Lunghezza:: 9.25 mm

Serie:: CSD19535KTT

Tipo di transistor:: 1 N-Channel

Larghezza:: 10.26 mm

Marca:: Texas Instruments

Transconduttanza diretta - Min:: 301 S

Tempo di caduta:: 15 ns

Sensibile all'umidità:: sì

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 18 ns

Quantità confezione di fabbrica:: 50

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 21 ns

Tempo di ritardo di accensione tipico:: 9 ns

Unità di peso:: 0.068643 oz

Tags: CSD19535, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19535KTTT Descrizione

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 3-DDPAK/TO-263 -55 to 175

***ical: Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R

***ark: Mosfet, N-Ch, 100V, 200A, To-263Aa-3

***S: French Electronic Distributor since 1988

*** Stop Electro: Power Field-Effect Transistor, 200A I(D), 100V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

***Yang: Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

***ment14 APAC: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***el Electronic: Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

*** Source Electronics: Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET

***ernational Rectifier: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***el Electronic: Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7

***(Formerly Allied Electronics): IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK

***roFlash: Single N-Channel 75 V 3 mOhm 160 nC HEXFET¬Æ Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W

***nell: MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D

***ure Electronics: N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ

***Yang: Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop Global: Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7

***emi: N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***el Electronic: Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***XS: This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

***: ™

CSD19535KTTT Maggiori informazioni

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descrizione	Azione	Prezzo
CSD19535KTTT DISTI # 296-41135-1-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-6-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-2-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	1250In Stock	250:$2.5784 100:$2.8571 50:$3.1358
CSD19535KTTT DISTI # CSD19535KTTT	Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT) RoHS: Compliant Min Qty: 200 Container: Reel	Americas - 0	200:$1.7900 300:$1.6900 500:$1.5900 1000:$1.5900 2000:$1.4900
CSD19535KTTT	CSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET	1000	1000:$1.4400 750:$1.5100 500:$1.7900 250:$2.1000 100:$2.2400 25:$2.5600 10:$2.7500 1:$3.0500
CSD19535KTTT DISTI # 595-CSD19535KTTT	MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant	561	1:$3.3500 10:$3.0200 50:$3.0200 100:$2.4700 250:$2.3100 500:$2.1000
CSD19535KTT DISTI # 595-CSD19535KTT	MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 RoHS: Compliant	88	1:$3.0200 10:$2.7100 100:$2.2200 250:$2.0800 500:$1.8900
CSD19535KTTT DISTI # 9009885P	NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL	230	10:£2.2000 26:£2.1150 50:£2.0300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: ADS1247IPW OMO.#: OMO-ADS1247IPW	Analog to Digital Converters - ADC Low Noise,Prec 24B ADC
	Mfr.#: LAN9514I-JZX OMO.#: OMO-LAN9514I-JZX	USB Interface IC Hi-Speed USB 2.0 Hub High Perf 10/100 Ind
	Mfr.#: USB2514BI-AEZG OMO.#: OMO-USB2514BI-AEZG	USB Interface IC USB2.0 HIGH SPEED IND HUB CONTROLLER
	Mfr.#: IRF2907ZPBF OMO.#: OMO-IRF2907ZPBF	MOSFET MOSFT 75V 170A 4.5mOhm 180nC
	Mfr.#: ATMEGA2561-16AU OMO.#: OMO-ATMEGA2561-16AU	8-bit Microcontrollers - MCU 256kB Flash 4kB EEPROM 54 I/O Pins
	Mfr.#: LT3990EDD#PBF OMO.#: OMO-LT3990EDD-PBF	Switching Voltage Regulators 60V, 350mA Step-Down Regulator with 2uA Quiescent Current and Integrated Diodes in 3x3 DFN
	Mfr.#: 74650174R OMO.#: OMO-74650174R	Terminals WP-THRBU THR Bush M4 3.5mm Blind
	Mfr.#: ADS1247IPW OMO.#: OMO-ADS1247IPW-TEXAS-INSTRUMENTS	Analog to Digital Converters - ADC Low Noise,Prec 24B ADC
	Mfr.#: 06033C104KAT2A OMO.#: OMO-06033C104KAT2A-AVX	Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.1uF 10% X7R
	Mfr.#: LAN9514I-JZX OMO.#: OMO-LAN9514I-JZX-MICROCHIP-TECHNOLOGY	USB Interface IC Hi-Speed USB 2.0 Hub High Perf 10/100 Ind

Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di CSD19535KTTT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,70 USD~~; ~~3,70 USD~~

10: ~~3,32 USD~~; ~~33,20 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

CSD19535 3
CSD1953 28
CSD19 38
CSD1 359
CSD 800

Prodotti più recenti

DRV8704 Dual-Brushed DC Gate Driver

OMO Electronic offers its DRV8704, 52 V, dual H-bridge, PWM gate driver for applications including textile, automatic teller, money handling, and office automation machines.
LMZ31704 SIMPLE SWITCHER® Power Module

TI's SIMPLE SWITCHER® power modules achieve efficiencies of more than 95% and have stellar power dissipation capabilities.
TPS62480 2-Phase Step-Down Converter

OMO Electronic' TPS62480 is a synchronous 2-phase step-down DC-DC converter for low profile point-of-load power supplies in a small HotRod™ package.
Compare CSD19535KTTT

CSD19535KCS vs CSD19535KTT vs CSD19535KTTT
TPS92512/13 Buck Current Regulator

OMO Electronic TPS92512/13 is a step-down (buck) current regulator LED driver with integrated analog current adjust.
TLV9052 RRIO Op-Amp

OMO Electronic' TLV9052 5 MHz, low-power, RRIO op-amp offers an ultra-high slew rate and low supply current per channel providing excellent AC performance.

More Newest Products

CSD19535KTTT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes