PMZB370UNE,315

Mfr. #:: PMZB370UNE,315
Produttore:: Nexperia
Descrizione:: MOSFET N-Chan 30V 900mA
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: PMZB370UNE,315 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Nexperia

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: DFN-1006B-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 900 mA

Rds On - Resistenza Drain-Source:: 490 mOhms

Vgs - Tensione Gate-Source:: 8 V

Pd - Dissipazione di potenza:: 715 mW

Configurazione:: Separare

Confezione:: Bobina

Tipo di transistor:: 1 N-Channel

Marca:: Nexperia

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 10000

sottocategoria:: MOSFET

Tags: PMZB37, PMZB3, PMZB, PMZ

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PMZB370UNE,315 Descrizione

***peria: PMZB370UNE - 30 V, single N-channel Trench MOSFET

***ure Electronics: Single N-Channel 30 V 360 mW 1.16 nC Silicon Surface Mount Mosfet - SOT-883

***ical: Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

***i-Key: MOSFET N-CH 30V 900MA DFN1006B-3

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:900Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.37Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770Mv; Power Dissipation Pd:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770mV; Power Dissipation Pd:360mW; Transistor Case Style:SOT-883B; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:900mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.37ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:770mV; Dissipazione di Potenza Pd:360mW; Modello Case Transistor:SOT-883B; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
PMZB370UNE,315 DISTI # 1727-1379-1-ND	Nexperia	MOSFET N-CH 30V 0.9A DFN1006B-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6382In Stock	1000:$0.1642 500:$0.2129 100:$0.3020 10:$0.4310 1:$0.5500
PMZB370UNE,315 DISTI # 1727-1379-6-ND	Nexperia	MOSFET N-CH 30V 0.9A DFN1006B-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6382In Stock	1000:$0.1642 500:$0.2129 100:$0.3020 10:$0.4310 1:$0.5500
PMZB370UNE,315 DISTI # 1727-1379-2-ND	Nexperia	MOSFET N-CH 30V 0.9A DFN1006B-3 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.1319
PMZB370UNE,315 DISTI # PMZB370UNE,315	Nexperia	Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMZB370UNE,315) RoHS: Compliant Min Qty: 10000 Container: Reel	Americas - 280000	10000:$0.0969 20000:$0.0949 40000:$0.0919 60000:$0.0899 100000:$0.0879
PMZB370UNE,315 DISTI # PMZB370UNE315	Nexperia	Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Bulk (Alt: PMZB370UNE315) RoHS: Compliant Min Qty: 6250 Container: Bulk	Americas - 0	6250:$0.1049 6252:$0.1029 12502:$0.1009 31250:$0.0979 62500:$0.0959
PMZB370UNE,315 DISTI # 771-PMZB370UNE315	Nexperia	MOSFET N-Chan 30V 900mA RoHS: Compliant	0	10000:$0.1040 20000:$0.0960 50000:$0.0920
PMZB370UNE315	NXP Semiconductors	Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3 RoHS: Not Compliant	31500	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
PMZB370UNE315	Nexperia	Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3 RoHS: Not Compliant	660000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
PMZB370UNE,315 DISTI # 2498602	Nexperia	MOSFET, N-CH, 30V, 0.9A, SOT-883B-3 RoHS: Compliant	0	500:£0.1480 250:£0.1820 100:£0.2160 25:£0.3370 5:£0.3560

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: PMZB370UNE,315 OMO.#: OMO-PMZB370UNE-315	MOSFET N-Chan 30V 900mA
	Mfr.#: PMZB370UNE315 OMO.#: OMO-PMZB370UNE315-1190	Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
	Mfr.#: PMZB370UNE OMO.#: OMO-PMZB370UNE-1190	SMALL SIGNAL FIELD-EFFECT TRANSISTOR
	Mfr.#: PMZB370UNE,315 OMO.#: OMO-PMZB370UNE-315-NEXPERIA	MOSFET N-CH 30V 0.9A DFN1006B-3

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di PMZB370UNE,315 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,42 USD~~; ~~0,42 USD~~

10: ~~0,32 USD~~; ~~3,17 USD~~

100: ~~0,17 USD~~; ~~17,20 USD~~

1000: ~~0,13 USD~~; ~~129,00 USD~~

2500: ~~0,11 USD~~; ~~277,50 USD~~

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PMZB370UNE,315

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes