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IXFN240N15T2

IXFN240N15T2
Mfr. #:
IXFN240N15T2
Produttore:
Littelfuse
Descrizione:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFN240N15T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN240N15T2 DatasheetIXFN240N15T2 Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXFN240N15T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Montaggio su telaio
Pacchetto/custodia:
SOT-227-4
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
150 V
Id - Corrente di scarico continua:
240 A
Rds On - Resistenza Drain-Source:
5.2 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
460 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
830 W
Modalità canale:
Aumento
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFN240N15
Tipo:
GigaMOS Trench T2 HiperFet
Marca:
IXYS
Transconduttanza diretta - Min:
125 S
Tempo di caduta:
145 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
125 ns
Quantità confezione di fabbrica:
10
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
77 ns
Tempo di ritardo di accensione tipico:
48 ns
Unità di peso:
1.058219 oz
Tags
IXFN24, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 240 A 5.2 mO Surface Mount Power Mosfet - SOT 227
***i-Key
MOSFET N-CH 150V 240A SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXFN240N15T2
DISTI # IXFN240N15T2-ND		IXYS CorporationMOSFET N-CH 150V 240A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$27.7500
IXFN240N15T2
DISTI # 747-IXFN240N15T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		0
  • 200:$21.7500
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Mfr.#: IXFN240N15T2

OMO.#: OMO-IXFN240N15T2-IXYS-CORPORATION

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di IXFN240N15T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
10
27,75 USD
277,50 USD
30
25,50 USD
765,00 USD
50
24,42 USD
1 221,00 USD
100
23,70 USD
2 370,00 USD
200
21,75 USD
4 350,00 USD
500
20,70 USD
10 350,00 USD
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