STU2N105K5

STU2N105K5
Mfr. #:
STU2N105K5
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STU2N105K5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STU2N105K5 maggiori informazioni STU2N105K5 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-251-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1.05 kV
Id - Corrente di scarico continua:
1.5 A
Rds On - Resistenza Drain-Source:
8 Ohms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
10 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
60 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
MDmesh
Confezione:
Tubo
Serie:
STU2N105K5
Marca:
STMicroelectronics
Tempo di caduta:
38.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8.5 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
35 ns
Tempo di ritardo di accensione tipico:
14.5 ns
Unità di peso:
0.139332 oz
Tags
STU2N, STU2, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
***ure Electronics
N-Channel 1050V 1.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
***ronik
N-CH 1050V 1,5A 8000mOhm TO251
***icroelectronics SCT
Power MOSFETs, 1050V, 1.5A, IPAK, Tube
***el Electronic
IC AMP AUDIO PWR 3.1W MONO 8SON
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 900V 1.7A IPAK
***Yang
MOSFET 900V N-Channel QFET - Bulk
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 800V 1.8A IPAK
***ser
MOSFETs 800V N-Channel QFET
***Yang
N-CH/800V/1.8A/6.3OHM - Bulk
***emi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK
***ure Electronics
FQU2N100 Series N-Channel 1000 V 9 Ohms Mosfet - TO-220
***nell
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W; Available until stocks are exhausted
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package
***SIT Distribution GmbH
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STU2N105K5
DISTI # 30608508
STMicroelectronicsTrans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$1.0557
  • 24:$1.0684
STU2N105K5
DISTI # 497-15282-5-ND
STMicroelectronicsMOSFET N-CH 1050V 1.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Temporarily Out of Stock
    STU2N105K5
    DISTI # C1S730200997856
    STMicroelectronicsMOSFETs50
    • 50:$0.8280
    • 1:$0.8380
    STU2N105K5
    DISTI # STU2N105K5
    STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 3000
    • 1:€1.5679
    • 10:€1.3289
    • 25:€1.3259
    • 50:€1.3229
    • 100:€1.0579
    • 500:€0.9319
    • 1000:€0.7689
    STU2N105K5
    DISTI # STU2N105K5
    STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 0
    • 3000:$0.9289
    • 6000:$0.8849
    • 12000:$0.8449
    • 18000:$0.8079
    • 30000:$0.7909
    STU2N105K5
    DISTI # 511-STU2N105K5
    STMicroelectronicsMOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
    RoHS: Compliant
    0
    • 1:$1.8300
    • 10:$1.5500
    • 100:$1.2400
    • 500:$1.0900
    • 1000:$0.8990
    • 3000:$0.8380
    • 6000:$0.8070
    • 9000:$0.7750
    STU2N105K5
    DISTI # TMOSP12840
    STMicroelectronicsN-CH 1050V 1,5A 8000mOhm TO251Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$1.0492
    STU2N105K5STMicroelectronics 3167
      STU2N105K5
      DISTI # XSKDRABV0028410
      STMicroelectronicsPower Field-Effect Transistor
      RoHS: Compliant
      2400 in Stock0 on Order
      • 2400:$1.1600
      • 600:$1.2400
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      OMO.#: OMO-STRVS185X02B

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      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F

      TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
      STD2N105K5

      Mfr.#: STD2N105K5

      OMO.#: OMO-STD2N105K5

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      STF5N105K5

      Mfr.#: STF5N105K5

      OMO.#: OMO-STF5N105K5

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      OMO.#: OMO-LM5021MM-1-NOPB

      AC/DC Converters AC-DC Crnt Mode PWM Cntlr
      STU7N105K5

      Mfr.#: STU7N105K5

      OMO.#: OMO-STU7N105K5

      MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in IPAK package
      STRVS185X02B

      Mfr.#: STRVS185X02B

      OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

      TVS DIODE 128V 185V SMB
      STRVS280X02F

      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

      TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di STU2N105K5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,83 USD
      1,83 USD
      10
      1,55 USD
      15,50 USD
      100
      1,24 USD
      124,00 USD
      500
      1,09 USD
      545,00 USD
      1000
      0,90 USD
      899,00 USD
      3000
      0,84 USD
      2 514,00 USD
      6000
      0,81 USD
      4 842,00 USD
      9000
      0,78 USD
      6 975,00 USD
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