SI7923DN-T1-GE3

Mfr. #:: SI7923DN-T1-GE3
Produttore:: Vishay
Descrizione:: RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7923DN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI7923DN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7923DN-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8 Dual

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8 Dual

Configurazione: Dual

Tipo FET: 2 P-Channel (Dual)

Potenza-Max: 1.3W

Tipo a transistor: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 4.3A

Rds-On-Max-Id-Vgs: 47 mOhm @ 6.4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 21nC @ 10V

Pd-Power-Dissipazione: 1.3 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 4.3 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistenza: 47 mOhms

Polarità del transistor: Canale P

Tags: SI7923DN-T, SI7923, SI792, SI79, SI7

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7923DN-T1-GE3 Descrizione

***et Europe: Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R

***ronik: DUAL -30V 6A 47mOhm PPAK

***: DUAL P-CHANNEL 30-V (D-S)

***ment14 APAC: DUAL P CHANNEL MOSFET, -30V, 6.4A; Trans; DUAL P CHANNEL MOSFET, -30V, 6.4A; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, P Channel:-30V; On Resistance Rds(on), P Channel:0.038ohm; Rds(on) Test Voltage Vgs:-4.5V

SI7923DN-T1-GE3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7923DN-T1-GE3 DISTI # V72:2272_09216414	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2740	1000:$1.2827 500:$1.2971 250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519 1:$1.4689
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18In Stock	10:$1.6180 1:$1.7900
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.7573
SI7923DN-T1-GE3 DISTI # 25790072	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2740	1000:$1.2827 500:$1.2971 250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	3000:$8.1000 6000:$5.5862 9000:$4.1539 15000:$3.3750 30000:$3.0566 75000:$2.9455 150000:$2.8421
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7923DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7419 6000:$0.7199 12000:$0.6909 18000:$0.6709 30000:$0.6529
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.3469 10:€0.9659 25:€0.7839 50:€0.6929 100:€0.6829 500:€0.6709 1000:€0.6629
SI7923DN-T1-GE3 DISTI # 26R1943	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-6.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):75mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	0	1:$1.5900 25:$1.3200 50:$1.1700 100:$1.0200 250:$0.9570 500:$0.8930 1000:$0.7400
SI7923DN-T1-GE3 DISTI # 33P5450	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, 6.4A, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:6.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):75mohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.7550 3000:$0.7500 6000:$0.7140 12000:$0.6330
SI7923DN-T1-GE3 DISTI # 781-SI7923DN-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.5900 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7400 3000:$0.6890
SI7923DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7923DN-T1-GE3 DISTI # C1S803604015339	Vishay Intertechnologies	MOSFETs	2740	250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519
SI7923DN-T1-GE3 DISTI # 1871392	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A RoHS: Compliant	0	3000:$2.9300 6000:$2.4300 9000:$1.9000
SI7923DN-T1-GE3 DISTI # 1871392	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A RoHS: Compliant	0	3000:£0.6500
SI7923DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8	Americas -

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7923DN-T1-E3 OMO.#: OMO-SI7923DN-T1-E3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7923DN-T1-GE3 OMO.#: OMO-SI7923DN-T1-GE3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7923DN-T1-GE3 OMO.#: OMO-SI7923DN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V
	Mfr.#: SI7923DN-T1-E3-CUT TAPE OMO.#: OMO-SI7923DN-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI7923DN OMO.#: OMO-SI7923DN-1190	Nuovo e originale
	Mfr.#: SI7923DN-T1-E3 OMO.#: OMO-SI7923DN-T1-E3-VISHAY	MOSFET 2P-CH 30V 4.3A 1212-8
	Mfr.#: SI7923DN-T1-E3CT-ND OMO.#: OMO-SI7923DN-T1-E3CT-ND-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SI7923DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,96 USD~~; ~~0,96 USD~~

10: ~~0,91 USD~~; ~~9,09 USD~~

100: ~~0,86 USD~~; ~~86,13 USD~~

500: ~~0,81 USD~~; ~~406,75 USD~~

1000: ~~0,77 USD~~; ~~765,60 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI7923DN-T 4
SI7923 5
SI792 14
SI79 142
SI7 1547

SI7923DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes