GS816118DD-333I

GS816118DD-333I
Mfr. #:
GS816118DD-333I
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS816118DD-333I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS816118DD-333I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
4.5 ns
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
260 mA, 305 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS816118DD
Tipo:
Conduttura/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS816118DD-33, GS816118DD-3, GS816118DD, GS816118D, GS81611, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4.5ns/2.5ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS816118DGD-333

Mfr.#: GS816118DGD-333

OMO.#: OMO-GS816118DGD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGD-375I

Mfr.#: GS816118DGD-375I

OMO.#: OMO-GS816118DGD-375I

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGD-150V

Mfr.#: GS816118DGD-150V

OMO.#: OMO-GS816118DGD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-200IV

Mfr.#: GS816118DGT-200IV

OMO.#: OMO-GS816118DGT-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-200

Mfr.#: GS816118DGT-200

OMO.#: OMO-GS816118DGT-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-250

Mfr.#: GS816118DGT-250

OMO.#: OMO-GS816118DGT-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-200V

Mfr.#: GS816118DGT-200V

OMO.#: OMO-GS816118DGT-200V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DD-200IV

Mfr.#: GS816118DD-200IV

OMO.#: OMO-GS816118DD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-333IV

Mfr.#: GS816118DGD-333IV

OMO.#: OMO-GS816118DGD-333IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118BD-150

Mfr.#: GS816118BD-150

OMO.#: OMO-GS816118BD-150-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS816118DD-333I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
36
21,64 USD
779,04 USD
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