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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SQD100N04-3M6L_GE3 DISTI # SQD100N04-3M6L_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 100A 3-Pin TO-252 - Tape and Reel (Alt: SQD100N04-3M6L_GE3) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
|
| SQD100N04-3M6L-GE3 DISTI # 70617448 | Vishay Siliconix | SQD100N04-3M6L-GE3 N-channel MOSFET Transistor,100 A,40 V,3-Pin TO-252AA RoHS: Compliant | 0 |
|
| SQD100N04-3m6L_GE3 DISTI # 78-SQD100N04-3M6LGE | Vishay Intertechnologies | MOSFET N-Channel 40V AEC-Q101 Qualified RoHS: Compliant | 1285 |
|
| SQD100N04-3M6L-GE3 DISTI # 78-SQD100N04-3M6LGE3 | Vishay Intertechnologies | MOSFET N-Channel 40V Automotive MOSFET RoHS: Compliant | 0 | |
| SQD100N04-3M6L-GE3 DISTI # 8193939P | Vishay Intertechnologies | TRANS MOSFET N-CH 40V 100A, RL | 2690 |
|
| SQD100N043M6LGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | Europe - 2000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SQD100N04-3m6_GE3 OMO.#: OMO-SQD100N04-3M6-GE3-0DC |
MOSFET N-Channel 40V AEC-Q101 Qualified |
|
|
Mfr.#: SQD100N04-3m6L_GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-039 |
MOSFET N-Channel 40V AEC-Q101 Qualified |
|
Mfr.#: SQD100N04_3M6T4GE3 OMO.#: OMO-SQD100N04-3M6T4GE3 |
MOSFET 40V Vds 20V Vgs TO-252 |
|
|
Mfr.#: SQD100N04-3M6-GE3 OMO.#: OMO-SQD100N04-3M6-GE3-57C |
MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3 |
|
|
Mfr.#: SQD100N04-3M6L-GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-678 |
MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE |
|
Mfr.#: SQD100N04-3M6L-GE3 OMO.#: OMO-SQD100N04-3M6L-GE3-126 |
IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET |
|
Mfr.#: SQD100N04-3M6L_GE3 |
MOSFET N-CH 40V 100A TO252AA |
|
|
Mfr.#: SQD100N04-3M6_GE3 OMO.#: OMO-SQD100N04-3M6-GE3-VISHAY |
MOSFET N-CH 40V 100A TO252AA |
|
|
Mfr.#: SQD100N04-3M6 OMO.#: OMO-SQD100N04-3M6-1190 |
Nuovo e originale |
|
|
Mfr.#: SQD100N043M6LGE3 OMO.#: OMO-SQD100N043M6LGE3-1190 |
Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
