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BSC019N04LSATMA1

BSC019N04LSATMA1
Mfr. #:
BSC019N04LSATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET MV POWER MOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC019N04LSATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSC019N04LSATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
40 V
Id - Corrente di scarico continua:
100 A
Rds On - Resistenza Drain-Source:
1.5 mOhms
Vgs th - Tensione di soglia gate-source:
1.2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
57 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
78 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.27 mm
Lunghezza:
5.9 mm
Serie:
OptiMOS 5
Tipo di transistor:
1 N-Channel
Larghezza:
5.15 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
4 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
6 ns
Parte # Alias:
BSC019N04LS SP001067012
Tags
BSC019N04L, BSC019N04, BSC019, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSC019N04LS Series 40 V 27 A SMT OptiMOSTM Power-MOSFET - PG-TDSON-8
***nell
MOSFET, N-CH, 40V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 78W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
*** Source Electronics
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
***ure Electronics
Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3
***nell
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00188ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 158W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ineon SCT
40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ure Electronics
Single N-Channel 40 V 1.5 mOhm 135 nC OptiMOS™ Power Mosfet - D2PAK
***ark
Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***Yang
Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled
***ure Electronics
Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***Yang
FDMS015N04B ON Semiconductor Transistors MOSFETs N-CH 40V 31.3A 8-Pin PQFN EP T/R - Arrow.com
***emi
N-Channel PowerTrench® MOSFET 40V, 100A, 1.5mΩ
***r Electronics
Power Field-Effect Transistor, 31.3A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
*** Source Electronics
MOSFET N-CH 30V 28A POWER56 / Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ
***r Electronics
Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 64-LQFP 48 10K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit MCU 32-Bit RX23T RX CISC 128KB Flash 3.3V/5V 64-Pin LFQFP Tray
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descrizione Azione Prezzo
BSC019N04LSATMA1
DISTI # 31438958		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R
RoHS: Compliant		5000
  • 5000:$0.5216
BSC019N04LSATMA1
DISTI # BSC019N04LSATMA1-ND		Infineon Technologies AGMOSFET N-CH 40V 27A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.7166
BSC019N04LSATMA1
DISTI # V36:1790_06383850		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R
RoHS: Compliant		0
  • 5000000:$0.6116
  • 2500000:$0.6119
  • 500000:$0.6450
  • 50000:$0.7062
  • 5000:$0.7166
BSC019N04LSATMA1
DISTI # V72:2272_06383850		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R
RoHS: Compliant		0
    BSC019N04LSATMA1
    DISTI # BSC019N04LSATMA1    		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC019N04LSATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.5329
    • 30000:$0.5429
    • 20000:$0.5619
    • 10000:$0.5829
    • 5000:$0.6049
    BSC019N04LSATMA1
    DISTI # SP001067012    		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R (Alt: SP001067012)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.4949
    • 30000:€0.5329
    • 20000:€0.5779
    • 10000:€0.6299
    • 5000:€0.7699
    BSC019N04LSATMA1
    DISTI # BSC019N04LS    		Infineon Technologies AGTrans MOSFET N-CH 40V 27A 8-Pin TDSON T/R (Alt: BSC019N04LS)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Asia - 0
    • 250000:$0.4872
    • 125000:$0.4935
    • 50000:$0.4999
    • 25000:$0.5064
    • 15000:$0.5201
    • 10000:$0.5346
    • 5000:$0.5499
    BSC019N04LSATMA1
    DISTI # 49AC0104    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes4824
    • 1000:$0.7700
    • 500:$0.9280
    • 250:$0.9940
    • 100:$1.0600
    • 50:$1.1500
    • 25:$1.2400
    • 10:$1.3200
    • 1:$1.5600
    BSC019N04LS
    DISTI # 726-BSC019N04LS    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		4177
    • 1:$1.5400
    • 10:$1.3100
    • 100:$1.0500
    • 500:$0.9190
    • 1000:$0.7620
    BSC019N04LSATMA1
    DISTI # 726-BSC019N04LSATMA1    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		5000
    • 1:$1.5400
    • 10:$1.3100
    • 100:$1.0500
    • 500:$0.9190
    • 1000:$0.7620
    • 2500:$0.7090
    • 5000:$0.6830
    • 10000:$0.6570
    BSC019N04LSATMA1
    DISTI # 2839429    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-84814
    • 100:£0.9510
    • 10:£1.2500
    • 1:£1.5800
    BSC019N04LSATMA1
    DISTI # 2839429    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
    RoHS: Compliant    		4824
    • 5000:$1.0700
    • 1000:$1.1200
    • 500:$1.1900
    • 250:$1.3700
    • 100:$1.6200
    • 25:$1.9900
    • 5:$2.2900
    Immagine Parte # Descrizione
    BSC019N06NSATMA1

    Mfr.#: BSC019N06NSATMA1

    OMO.#: OMO-BSC019N06NSATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    BSC019N04LSATMA1

    Mfr.#: BSC019N04LSATMA1

    OMO.#: OMO-BSC019N04LSATMA1

    		 MOSFET MV POWER MOS
    BSC019N02KSGAUMA1

    Mfr.#: BSC019N02KSGAUMA1

    OMO.#: OMO-BSC019N02KSGAUMA1

    		 MOSFET LV POWER MOS
    BSC019N02KS

    Mfr.#: BSC019N02KS

    OMO.#: OMO-BSC019N02KS-1190

    		 Nuovo e originale
    BSC019N04NS

    Mfr.#: BSC019N04NS

    OMO.#: OMO-BSC019N04NS-1190

    		 Nuovo e originale
    BSC019N04NS G(SP00038829

    Mfr.#: BSC019N04NS G(SP00038829

    OMO.#: OMO-BSC019N04NS-G-SP00038829-1190

    		 Nuovo e originale
    BSC019N04NS G)

    Mfr.#: BSC019N04NS G)

    OMO.#: OMO-BSC019N04NS-G--1190

    		 Nuovo e originale
    BSC019N04NSG

    Mfr.#: BSC019N04NSG

    OMO.#: OMO-BSC019N04NSG-1190

    		 Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
    BSC019N04LSTATMA1

    Mfr.#: BSC019N04LSTATMA1

    OMO.#: OMO-BSC019N04LSTATMA1-INFINEON-TECHNOLOGIES

    		 DIFFERENTIATED MOSFETS
    BSC019N06NSATMA1

    Mfr.#: BSC019N06NSATMA1

    OMO.#: OMO-BSC019N06NSATMA1-INFINEON-TECHNOLOGIES

    		 DIFFERENTIATED MOSFETS
    Disponibilità
    Azione:
    Available
    Su ordine:
    1988
    Inserisci la quantità:
    Il prezzo attuale di BSC019N04LSATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,54 USD
    1,54 USD
    10
    1,31 USD
    13,10 USD
    100
    1,05 USD
    105,00 USD
    500
    0,92 USD
    459,50 USD
    1000
    0,76 USD
    762,00 USD
    2500
    0,71 USD
    1 772,50 USD
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