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FCU5N60TU

FCU5N60TU
Mfr. #:
FCU5N60TU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Channel MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCU5N60TU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
4.6 A
Rds On - Resistenza Drain-Source:
810 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
54 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCU5N60
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
3.8 S
Tempo di caduta:
22 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
40 ns
Quantità confezione di fabbrica:
5040
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
47 ns
Tempo di ritardo di accensione tipico:
12 ns
Unità di peso:
0.012102 oz
Tags
FCU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK
***ark
MOSFET Transistor, N Channel, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
*** Source Electronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 4A IPAK
***r Electronics
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 600V, 4A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4A; Package / Case:IPAK; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251
***ineon SCT
Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7, PG-TO251-3, RoHS
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube
***ark
TUBE / NFET DPAK 600V 5.9A 900
Parte # Mfg. Descrizione Azione Prezzo
FCU5N60TU
DISTI # V79:2366_17786152		ON SemiconductorSF1 600V 950MOHM E IPAK3070
  • 2500:$0.5582
  • 1000:$0.5914
  • 500:$0.7549
  • 100:$0.8613
  • 10:$1.1232
  • 1:$1.4600
FCU5N60TU
DISTI # V36:1790_06359175		ON SemiconductorSF1 600V 950MOHM E IPAK0
    FCU5N60TU
    DISTI # FCU5N60TU-ND    		ON SemiconductorMOSFET N-CH 600V 4.6A I-PAK
    RoHS: Compliant
    Min Qty: 5040
    Container: Tube    		Limited Supply - Call
    • 5040:$0.6042
    FCU5N60TU
    DISTI # 26637322    		ON SemiconductorSF1 600V 950MOHM E IPAK5040
    • 5040:$0.4557
    FCU5N60TU
    DISTI # 26115035    		ON SemiconductorSF1 600V 950MOHM E IPAK3070
    • 2500:$0.6001
    • 1000:$0.6358
    • 500:$0.8115
    • 100:$0.9259
    • 17:$1.2074
    FCU5N60TU
    DISTI # FCU5N60TU    		ON SemiconductorTrans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FCU5N60TU)
    RoHS: Compliant
    Min Qty: 70
    Container: Tube    		Americas - 5040
    • 700:$0.4429
    • 350:$0.4539
    • 210:$0.4599
    • 140:$0.4659
    • 70:$0.4689
    FCU5N60TU
    DISTI # FCU5N60TU    		ON SemiconductorTrans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FCU5N60TU)
    RoHS: Compliant
    Min Qty: 582
    Container: Bulk    		Americas - 0
    • 5820:$0.5299
    • 2910:$0.5439
    • 1746:$0.5509
    • 1164:$0.5579
    • 582:$0.5619
    FCU5N60TU
    DISTI # 20M1157    		ON SemiconductorSF1 600V 950MOHM E IPAK / TUBE0
    • 10000:$0.5850
    • 2500:$0.6120
    • 1000:$0.6660
    • 500:$0.7990
    • 100:$0.9120
    • 10:$1.1300
    • 1:$1.3900
    FCU5N60TU.
    DISTI # 96AC0001    		ON SemiconductorSF1 600V 950MOHM E IPAK ROHS COMPLIANT: YES0
    • 700:$0.4470
    • 350:$0.4580
    • 142:$0.4640
    • 72:$0.4710
    • 1:$0.4740
    FCU5N60TU
    DISTI # 512-FCU5N60TU    		ON SemiconductorMOSFET 600V N-Channel MOSFET
    RoHS: Compliant    		4970
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8870
    • 500:$0.7840
    • 1000:$0.6190
    • 2500:$0.5900
    FCU5N60TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		2588
    • 1000:$0.5700
    • 500:$0.6000
    • 100:$0.6200
    • 25:$0.6500
    • 1:$0.7000
    FCU5N60TU
    DISTI # 1324781    		ON Semiconductor 
    RoHS: Compliant    		0
    • 1000:$1.0200
    • 500:$1.3000
    • 100:$1.4700
    • 10:$1.9100
    • 1:$2.2400
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1987
    Inserisci la quantità:
    Il prezzo attuale di FCU5N60TU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,35 USD
    1,35 USD
    10
    1,15 USD
    11,50 USD
    100
    0,89 USD
    88,70 USD
    500
    0,78 USD
    392,00 USD
    1000
    0,62 USD
    619,00 USD
    2500
    0,59 USD
    1 475,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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