RGT40NS65DGC9

RGT40NS65DGC9
Mfr. #:
RGT40NS65DGC9
Produttore:
Rohm Semiconductor
Descrizione:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RGT40NS65DGC9 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
RGT40NS65DGC9 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 40A 161000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 40A, 175°C, 161W; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:161W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descrizione Azione Prezzo
RGT40NS65DGC9
DISTI # RGT40NS65DGC9-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 3000:$1.3734
  • 1000:$1.4224
  • 100:$2.0895
  • 25:$2.4524
  • 10:$2.6000
  • 1:$2.8900
RGT40NS65DGC9
DISTI # 755-RGT40NS65DGC9
ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
1000
  • 1:$2.8800
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
RGT40NS65DGC9ROHM Semiconductor 40
  • 33:$2.1600
  • 10:$2.3760
  • 1:$3.2400
RGT40NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
Americas -
    RGT40NS65DGC9ROHM SemiconductorRoHS(ship within 1day)50
    • 1:$3.0000
    • 10:$2.2500
    • 50:$1.5000
    • 100:$1.2000
    • 500:$1.1200
    • 1000:$1.0800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W
    RoHS: Compliant
    0
    • 1000:$1.8000
    • 500:$2.1100
    • 250:$2.2700
    • 100:$2.3900
    • 10:$2.7900
    • 1:$3.6800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W0
    • 500:£1.2100
    • 250:£1.3000
    • 100:£1.3700
    • 10:£1.6000
    • 1:£2.1100
    Immagine Parte # Descrizione
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL

    IGBT Transistors 650V 20A IGBT Stop Trench
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL

    IGBT Transistors FIELD STOP TRENCH IGBT
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL-ROHM-SEMI

    IGBT Transistors 650V 20A Field Stop Trench IGBT
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL-1190

    FIELD STOP TRENCH IGBT
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9-1190

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
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    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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