We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSP125L6327HTSA1 DISTI # BSP125L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 120MA SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP125L6327HTSA1 DISTI # BSP125L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 600V 120MA SOT-223 - Bulk (Alt: BSP125L6327HTSA1) Min Qty: 834 Container: Bulk | Americas - 0 |
|
| BSP125 L6327 DISTI # 726-BSP125L6327 | Infineon Technologies AG | MOSFET N-Ch 600V 120mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP125L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 358800 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSP125L6327 OMO.#: OMO-BSP125L6327-1190 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP125L6327HTSA1 |
MOSFET N-CH 600V 120MA SOT-223 |
|
|
Mfr.#: BSP125L6327XT OMO.#: OMO-BSP125L6327XT-1190 |
Nuovo e originale |
|
|
Mfr.#: BSP125L6433 OMO.#: OMO-BSP125L6433-1190 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP125L6433HTMA1 |
MOSFET N-CH 600V 120MA SOT-223 |
