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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI4160DY-T1-GE3 DISTI # V72:2272_09215537 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # V36:1790_09215537 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 1252In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 1252In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4160DY-T1-GE3 DISTI # 25789831 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 50000 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4160DY-T1-GE3 DISTI # 05W6940 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4160DY-T1-GE3. DISTI # 15AC0296 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 50000 |
|
| SI4160DY-T1-GE3 DISTI # 781-SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 2382 |
|
| SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | Americas - 2500 |
|
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 1776 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 140 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 2922 | ||
| SI4160DY-T1-GE3 | Vishay Semiconductors | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI4160DY-T1-GE3 OMO.#: OMO-SI4160DY-T1-GE3 |
MOSFET 30V Vds 20V Vgs SO-8 |
|
Mfr.#: SI4160DY OMO.#: OMO-SI4160DY-1190 |
Nuovo e originale |
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Mfr.#: SI4160DY-T1 OMO.#: OMO-SI4160DY-T1-1190 |
Nuovo e originale |
|
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Mfr.#: SI4160DY-T1-E3 OMO.#: OMO-SI4160DY-T1-E3-1190 |
Nuovo e originale |
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Mfr.#: SI4160DY-T1-GE3 OMO.#: OMO-SI4160DY-T1-GE3-VISHAY |
MOSFET N-CH 30V 25.4A 8-SOIC |
|
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Mfr.#: SI4160DY-TI-GE3 OMO.#: OMO-SI4160DY-TI-GE3-1190 |
Nuovo e originale |
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Mfr.#: SI4160DY-T1-GE3-CUT TAPE |
Nuovo e originale |