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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BUZ32 H DISTI # BUZ32H-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube | 101In Stock |
|
| BUZ32HXKSA1 DISTI # BUZ32HXKSA1 | Infineon Technologies AG | - Bulk (Alt: BUZ32HXKSA1) RoHS: Compliant Min Qty: 610 Container: Bulk | Americas - 0 |
|
| BUZ32 H DISTI # 726-BUZ32H | Infineon Technologies AG | MOSFET N-Ch 200V 9.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ32HXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 7900 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BUZ32 H OMO.#: OMO-BUZ32-H |
MOSFET N-Ch 200V 9.5A TO220-3 |
|
Mfr.#: BUZ32 E3045 OMO.#: OMO-BUZ32-E3045-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ32 SMD OMO.#: OMO-BUZ32-SMD-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ325 , MMBZ20VA OMO.#: OMO-BUZ325-MMBZ20VA-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ328 OMO.#: OMO-BUZ328-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ32E3045 OMO.#: OMO-BUZ32E3045-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BUZ32H3045A(BUZ32H) OMO.#: OMO-BUZ32H3045A-BUZ32H--1190 |
Nuovo e originale |
|
Mfr.#: BUZ32H3045AATMA1 |
MOSFET N-CH 200V 9.5A TO-263 |
|
|
Mfr.#: BUZ32L3045A OMO.#: OMO-BUZ32L3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BUZ32 H |
IGBT Transistors MOSFET N-Ch 200V 9.5A TO220-3 |
