IPB110N20N3LFATMA1

Mfr. #:: IPB110N20N3LFATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 200 D2PAK-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB110N20N3LFATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Valore attributo

Tags: IPB110, IPB11, IPB1, IPB

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB110N20N3LFATMA1 Descrizione

***ical: Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 200 D2PAK-3

***ronik: N-CH 200V 88A 11mOhm D2PAK

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 200V, 88A, 250W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 200V, 88A, 250W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0098ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB110N20N3LFATMA1 DISTI # V72:2272_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$5.6780 10:$5.9310 1:$6.5000
IPB110N20N3LFATMA1 DISTI # V36:1790_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	2000:$4.1875 1000:$4.3485
IPB110N20N3LFATMA1 DISTI # 26196752	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$6.1039 10:$6.3758 2:$6.9875
IPB110N20N3LFATMA1 DISTI # SP001503864	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503864) RoHS: Compliant Min Qty: 1000	Europe - 1000	1000:€3.8900 2000:€3.7900 4000:€3.5900 6000:€3.3900 10000:€3.0900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.1900 2000:$3.9900 4000:$3.8900 6000:$3.6900 10000:$3.6900
IPB110N20N3LFATMA1 DISTI # 93AC7102	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes	1000	500:$3.6200 250:$3.9800 100:$4.1700 50:$4.4800 25:$4.8000 10:$5.0300 1:$5.5700
IPB110N20N3LFATMA1 DISTI # 726-IPB110N20N3LFATM	Infineon Technologies AG	MOSFET RoHS: Compliant	1825	1:$6.9600 10:$6.2900 25:$6.0000 100:$5.2100 250:$4.9700 500:$4.5300 1000:$3.9500 2000:$3.8000
IPB110N20N3LFATMA1 DISTI # XSKDRABV0021212	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$6.0000 1000:$6.4320
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:£4.0100 50:£4.3300 10:£4.6400 5:£5.3500 1:£5.8300
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:$5.9000 50:$6.5880 25:$7.6494 10:$7.7958 5:$8.3997 1:$9.3147

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: IPB110N20N3LFATMA1

OMO.#: OMO-IPB110N20N3LFATMA1

MOSFET

Mfr.#: IPB110N20N3LFATMA1

OMO.#: OMO-IPB110N20N3LFATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 200 D2PAK-3

Disponibilità

Azione:: Available
Su ordine:: 1000
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Il prezzo attuale di IPB110N20N3LFATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~5,27 USD~~; ~~5,27 USD~~

10: ~~5,00 USD~~; ~~50,04 USD~~

100: ~~4,74 USD~~; ~~474,03 USD~~

500: ~~4,48 USD~~; ~~2 238,50 USD~~

1000: ~~4,21 USD~~; ~~4 213,60 USD~~

Iniziare con

IPB110 3
IPB11 12
IPB1 239
IPB 1339

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IPB110N20N3LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes